Demonstration of High-Performance Ultra-Wide Bandgap SrSnO$_3$ Top-Gated MOSFETs
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866911464235728896 |
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| author | Koo, Junghyun Sun, Weideng Kim, Donghwan Lee, Hongseung Zhu, Chengyu Lee, Kiyoung Bae, Hagyoul Jalan, Bharat Qiu, Gang |
| author_facet | Koo, Junghyun Sun, Weideng Kim, Donghwan Lee, Hongseung Zhu, Chengyu Lee, Kiyoung Bae, Hagyoul Jalan, Bharat Qiu, Gang |
| contents | We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO$_2$ gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm$^2$/V$\cdot$s, an on-state current up to 194 mA/mm, an on/off current ratio above $10^8$, and a contact resistance of 0.66 $Ω\cdot$mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO$_3$ as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_20385 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Demonstration of High-Performance Ultra-Wide Bandgap SrSnO$_3$ Top-Gated MOSFETs Koo, Junghyun Sun, Weideng Kim, Donghwan Lee, Hongseung Zhu, Chengyu Lee, Kiyoung Bae, Hagyoul Jalan, Bharat Qiu, Gang Materials Science We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO$_2$ gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm$^2$/V$\cdot$s, an on-state current up to 194 mA/mm, an on/off current ratio above $10^8$, and a contact resistance of 0.66 $Ω\cdot$mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO$_3$ as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications. |
| title | Demonstration of High-Performance Ultra-Wide Bandgap SrSnO$_3$ Top-Gated MOSFETs |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.20385 |