Photogalvanic effect in few layer graphene
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866915929063948288 |
|---|---|
| author | Li, Zhaohang Chang, Kainan Li, Haoyu Gao, Yuxuan Xin, Wei Cheng, Jinluo Xu, Haiyang |
| author_facet | Li, Zhaohang Chang, Kainan Li, Haoyu Gao, Yuxuan Xin, Wei Cheng, Jinluo Xu, Haiyang |
| contents | We systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe the electronic states, the shift current conductivity and jerk current conductivity are calculated over a broad spectral range from terahertz to visible frequencies. Our symmetry analysis reveals that a nonvanishing shift current emerges only in ABA-stacked trilayer graphene due to its broken inversion symmetry, with a peak conductivity reaching approximately $1.21 \times 10^{-13}$ A$\cdot$m/V$^2$ at optimal doping. In contrast, the jerk current, permitted in all structures, requires an in-plane static electric field and exhibits pronounced spectral tunability with chemical potential. These findings establish a comprehensive symmetry-band-field coupling paradigm for nonlinear photocurrents in layered graphene and provide design principles for tunable, polarization-sensitive photodetection and energy-harvesting devices based on van der Waals heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_20454 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Photogalvanic effect in few layer graphene Li, Zhaohang Chang, Kainan Li, Haoyu Gao, Yuxuan Xin, Wei Cheng, Jinluo Xu, Haiyang Mesoscale and Nanoscale Physics We systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe the electronic states, the shift current conductivity and jerk current conductivity are calculated over a broad spectral range from terahertz to visible frequencies. Our symmetry analysis reveals that a nonvanishing shift current emerges only in ABA-stacked trilayer graphene due to its broken inversion symmetry, with a peak conductivity reaching approximately $1.21 \times 10^{-13}$ A$\cdot$m/V$^2$ at optimal doping. In contrast, the jerk current, permitted in all structures, requires an in-plane static electric field and exhibits pronounced spectral tunability with chemical potential. These findings establish a comprehensive symmetry-band-field coupling paradigm for nonlinear photocurrents in layered graphene and provide design principles for tunable, polarization-sensitive photodetection and energy-harvesting devices based on van der Waals heterostructures. |
| title | Photogalvanic effect in few layer graphene |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2602.20454 |