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| Auteurs principaux: | , , |
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| Format: | Preprint |
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2026
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| Accès en ligne: | https://arxiv.org/abs/2602.20754 |
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| _version_ | 1866917293191069696 |
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| author | Zhou, Yuteng Chaduteau, Alexandre Schindler, Frank |
| author_facet | Zhou, Yuteng Chaduteau, Alexandre Schindler, Frank |
| contents | We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ from trivial atomic insulators by a quantized spatial shift of their electronic Wannier centers with respect to the atomic lattice. We use symmetry indicator invariants that allow the prediction of non-trivial responses to crystal dislocations in these materials. We find that edge dislocations generically exhibit a non-trivial response, while screw dislocations always display a trivial response. With the aid of numerical simulations of realistic tight-binding models, we confirm the presence of mid-gap polarization bands localized along dislocations in silicon, diamond, and germanium. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_20754 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Topological Dislocation Response in Elementary Semiconductors Zhou, Yuteng Chaduteau, Alexandre Schindler, Frank Mesoscale and Nanoscale Physics We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ from trivial atomic insulators by a quantized spatial shift of their electronic Wannier centers with respect to the atomic lattice. We use symmetry indicator invariants that allow the prediction of non-trivial responses to crystal dislocations in these materials. We find that edge dislocations generically exhibit a non-trivial response, while screw dislocations always display a trivial response. With the aid of numerical simulations of realistic tight-binding models, we confirm the presence of mid-gap polarization bands localized along dislocations in silicon, diamond, and germanium. |
| title | Topological Dislocation Response in Elementary Semiconductors |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2602.20754 |