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| Main Authors: | , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2602.20754 |
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Table of Contents:
- We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ from trivial atomic insulators by a quantized spatial shift of their electronic Wannier centers with respect to the atomic lattice. We use symmetry indicator invariants that allow the prediction of non-trivial responses to crystal dislocations in these materials. We find that edge dislocations generically exhibit a non-trivial response, while screw dislocations always display a trivial response. With the aid of numerical simulations of realistic tight-binding models, we confirm the presence of mid-gap polarization bands localized along dislocations in silicon, diamond, and germanium.