Machine Learning Modeling of Temperature-Dependent Optoelectronic Properties of Anharmonic Solid Solutions

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Benítez, Pol, López, Cibrán, Saucedo, Edgardo, Cazorla, Claudio
Formato: Preprint
Publicado: 2026
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866908850256347136
author Benítez, Pol
López, Cibrán
Saucedo, Edgardo
Cazorla, Claudio
author_facet Benítez, Pol
López, Cibrán
Saucedo, Edgardo
Cazorla, Claudio
contents Leveraging strong optoelectronic responses to external stimuli, such as temperature and electric fields, is central to the development of advanced photonic technologies, including adaptive photodetectors and reconfigurable photovoltaic devices. However, only a limited number of semiconducting materials, typically characterized by strong electron-phonon coupling, are known to exhibit such pronounced responsiveness, and their equilibrium optoelectronic properties are often not optimally suited for targeted applications. Chemical engineering strategies, such as doping and solid-solution mixing, are therefore widely employed to fine-tune the electronic and optical properties of semiconductors. Predicting the impact of such modifications, however, remains highly challenging due to the intrinsic complexity of chemically disordered and anharmonic systems, as well as the computational limitations of conventional first-principles approaches. In this work, we introduce a new computational framework that combines ab initio electronic-structure methods with machine-learning techniques to achieve first-principles precision in the prediction of optoelectronic properties of anharmonic solid solutions at finite temperature. We apply this approach to silver chalco-halide solid solutions, an emergent class of optoelectronic materials that have been experimentally shown to exhibit large band-gap tunability and strong responses to thermal excitations. Our results provide quantitative insight into the interplay between chemical disorder, lattice dynamics, and electronic structure in these materials. More broadly, this study establishes a general strategy for the accurate modeling of optoelectronic functionality in chemically disordered semiconductors.
format Preprint
id arxiv_https___arxiv_org_abs_2602_20778
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Machine Learning Modeling of Temperature-Dependent Optoelectronic Properties of Anharmonic Solid Solutions
Benítez, Pol
López, Cibrán
Saucedo, Edgardo
Cazorla, Claudio
Materials Science
Leveraging strong optoelectronic responses to external stimuli, such as temperature and electric fields, is central to the development of advanced photonic technologies, including adaptive photodetectors and reconfigurable photovoltaic devices. However, only a limited number of semiconducting materials, typically characterized by strong electron-phonon coupling, are known to exhibit such pronounced responsiveness, and their equilibrium optoelectronic properties are often not optimally suited for targeted applications. Chemical engineering strategies, such as doping and solid-solution mixing, are therefore widely employed to fine-tune the electronic and optical properties of semiconductors. Predicting the impact of such modifications, however, remains highly challenging due to the intrinsic complexity of chemically disordered and anharmonic systems, as well as the computational limitations of conventional first-principles approaches. In this work, we introduce a new computational framework that combines ab initio electronic-structure methods with machine-learning techniques to achieve first-principles precision in the prediction of optoelectronic properties of anharmonic solid solutions at finite temperature. We apply this approach to silver chalco-halide solid solutions, an emergent class of optoelectronic materials that have been experimentally shown to exhibit large band-gap tunability and strong responses to thermal excitations. Our results provide quantitative insight into the interplay between chemical disorder, lattice dynamics, and electronic structure in these materials. More broadly, this study establishes a general strategy for the accurate modeling of optoelectronic functionality in chemically disordered semiconductors.
title Machine Learning Modeling of Temperature-Dependent Optoelectronic Properties of Anharmonic Solid Solutions
topic Materials Science
url https://arxiv.org/abs/2602.20778