Anisotropy reduction and tunability of hole-spin qubit g-factor in strained parabolic Ge/SiGe quantum wells

Documenti analoghi

• Formation of dark excitons in monolayer transition metal dichalcogenides by a vortex beam: optical selection rules
  di: Abdurazakov, Omadillo, et al.
  Pubblicazione: (2022)
• The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
  di: Losert, Merritt P. R., et al.
  Pubblicazione: (2025)
• Phonon-Induced Exchange Gate Infidelities in Semiconducting Si-SiGe Spin Qubits
  di: Brooks, Matthew, et al.
  Pubblicazione: (2024)
• Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions
  di: Imakire, K., et al.
  Pubblicazione: (2024)
• Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
  di: Sommer, L., et al.
  Pubblicazione: (2026)