Anisotropy reduction and tunability of hole-spin qubit g-factor in strained parabolic Ge/SiGe quantum wells

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Colmenar, R. K. L., Lin, Arthur, Abdurazakov, Omadillo, Shim, Yun-Pil, Bryant, Garnett W., Tahan, Charles
Formato: Preprint
Publicado: 2026
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866914349780566016
author Colmenar, R. K. L.
Lin, Arthur
Abdurazakov, Omadillo
Shim, Yun-Pil
Bryant, Garnett W.
Tahan, Charles
author_facet Colmenar, R. K. L.
Lin, Arthur
Abdurazakov, Omadillo
Shim, Yun-Pil
Bryant, Garnett W.
Tahan, Charles
contents Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also makes them susceptible to charge noise and inhomogeneous strain. This is further exacerbated by the highly anisotropic g-factor of the planar design. Although there are some known strategies to suppress charge noise, one approach is to engineer an isotropic g-factor. In this work we analyze how qubit confinement profile affects the g-factor of hole-spin qubits. We show that decreasing the characteristic in-plane qubit confinement length reduces the g-factor anisotropy. We perform analytical and numerical analysis to compare two types of quantum wells: square wells and parabolic wells. We show that square wells have limited tunability, while parabolic wells offer broader tunability, making them more promising for qubit engineering.
format Preprint
id arxiv_https___arxiv_org_abs_2602_21287
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Anisotropy reduction and tunability of hole-spin qubit g-factor in strained parabolic Ge/SiGe quantum wells
Colmenar, R. K. L.
Lin, Arthur
Abdurazakov, Omadillo
Shim, Yun-Pil
Bryant, Garnett W.
Tahan, Charles
Mesoscale and Nanoscale Physics
Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also makes them susceptible to charge noise and inhomogeneous strain. This is further exacerbated by the highly anisotropic g-factor of the planar design. Although there are some known strategies to suppress charge noise, one approach is to engineer an isotropic g-factor. In this work we analyze how qubit confinement profile affects the g-factor of hole-spin qubits. We show that decreasing the characteristic in-plane qubit confinement length reduces the g-factor anisotropy. We perform analytical and numerical analysis to compare two types of quantum wells: square wells and parabolic wells. We show that square wells have limited tunability, while parabolic wells offer broader tunability, making them more promising for qubit engineering.
title Anisotropy reduction and tunability of hole-spin qubit g-factor in strained parabolic Ge/SiGe quantum wells
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2602.21287