Mid-Infrared Thermal Radiation Harvesting using Uncooled Narrow Bandgap GeSn Thermophotovoltaic cell
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| Formato: | Preprint |
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2026
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| _version_ | 1866908851924631552 |
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| author | Daligou, Gérard Atalla, Mahmoud R. M. Lemieux-Leduc, Cédric Nomezine, Anthony Assali, Simone Soref, Richard Moutanabbir, Oussama |
| author_facet | Daligou, Gérard Atalla, Mahmoud R. M. Lemieux-Leduc, Cédric Nomezine, Anthony Assali, Simone Soref, Richard Moutanabbir, Oussama |
| contents | Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications requires narrow-bandgap semiconductors that not only absorb low-energy photons but also integrate with scalable, low-cost platforms. Although high-performance TPV devices have been demonstrated using III-V materials such as InAs, GaSb, and InGaAs(P), their use remains limited by cost and substrate size. With this perspective, narrow bandgap GeSn alloys are a promising alternative that extend group-IV absorption into the MWIR while being silicon-compatible. Although the potential of GeSn TPV cells has been predicted, no experimental demonstration has been reported. Here, proof-of-concept Ge$_{0.91}$Sn$_{0.09}$ p-i-n TPV diodes (1 mm diameter) grown on silicon were fabricated and their performance was benchmarked against commercial InAs and extended-InGaAs devices. Measurements at 300 K under 2.33 $μ$m laser and $\sim$1500 K SiC Globar illumination revealed peak responsivity of $\sim$ 0.2 A/W at $\sim$ 1.7 $μ$m, and an output power of $\sim$ 0.41 mW/cm$^2$. These devices show trends comparable to those of the InAs diode under identical conditions, although at reduced absolute levels. To assess the intrinsic performance potential, Poisson-drift-diffusion modeling incorporating experimentally calibrated emitter emissivity predicts power densities exceeding 1 W/cm$^2$ under moderate MWIR thermal illumination, indicating that the present devices operate far below their fundamental limits and are primarily constrained by defect-assisted recombination and transport losses. These results establish GeSn as a scalable, silicon-compatible MWIR TPV platform and highlight a larger performance potential achievable through material and device optimization. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_21392 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Mid-Infrared Thermal Radiation Harvesting using Uncooled Narrow Bandgap GeSn Thermophotovoltaic cell Daligou, Gérard Atalla, Mahmoud R. M. Lemieux-Leduc, Cédric Nomezine, Anthony Assali, Simone Soref, Richard Moutanabbir, Oussama Applied Physics Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications requires narrow-bandgap semiconductors that not only absorb low-energy photons but also integrate with scalable, low-cost platforms. Although high-performance TPV devices have been demonstrated using III-V materials such as InAs, GaSb, and InGaAs(P), their use remains limited by cost and substrate size. With this perspective, narrow bandgap GeSn alloys are a promising alternative that extend group-IV absorption into the MWIR while being silicon-compatible. Although the potential of GeSn TPV cells has been predicted, no experimental demonstration has been reported. Here, proof-of-concept Ge$_{0.91}$Sn$_{0.09}$ p-i-n TPV diodes (1 mm diameter) grown on silicon were fabricated and their performance was benchmarked against commercial InAs and extended-InGaAs devices. Measurements at 300 K under 2.33 $μ$m laser and $\sim$1500 K SiC Globar illumination revealed peak responsivity of $\sim$ 0.2 A/W at $\sim$ 1.7 $μ$m, and an output power of $\sim$ 0.41 mW/cm$^2$. These devices show trends comparable to those of the InAs diode under identical conditions, although at reduced absolute levels. To assess the intrinsic performance potential, Poisson-drift-diffusion modeling incorporating experimentally calibrated emitter emissivity predicts power densities exceeding 1 W/cm$^2$ under moderate MWIR thermal illumination, indicating that the present devices operate far below their fundamental limits and are primarily constrained by defect-assisted recombination and transport losses. These results establish GeSn as a scalable, silicon-compatible MWIR TPV platform and highlight a larger performance potential achievable through material and device optimization. |
| title | Mid-Infrared Thermal Radiation Harvesting using Uncooled Narrow Bandgap GeSn Thermophotovoltaic cell |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2602.21392 |