Room-temperature, continuous wave lasing in planar microcavities with quantum dots
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arXiv
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866917446535872512 |
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| author | Babichev, Andrey Bobrov, Mikhail Vasilev, Alexey Blokhin, Sergey Maleev, Nikolay Makhov, Ivan Kryzhanovskaya, Natalia Karachinsky, Leonid Novikov, Innokenty Egorov, Anton |
| author_facet | Babichev, Andrey Bobrov, Mikhail Vasilev, Alexey Blokhin, Sergey Maleev, Nikolay Makhov, Ivan Kryzhanovskaya, Natalia Karachinsky, Leonid Novikov, Innokenty Egorov, Anton |
| contents | High-quality planar cavities with low-absorption mirrors based on $Al_{0.2}Ga_{0.8}As/Al_{0.9}Ga_{0.1}As$ layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and quality-factor at the threshold are (4.2$\pm$0.3) $kW/cm^2$ and (6800$\pm$220). Increasing the pump level above two thresholds lead to an enlargement in the quality-factor to at least 19000. Efficient lateral heat dissipation in the planar semiconductor microcavity is confirmed by a low mode-energy shift of approximately 400 $μ$eV at two lasing thresholds. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_21742 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Room-temperature, continuous wave lasing in planar microcavities with quantum dots Babichev, Andrey Bobrov, Mikhail Vasilev, Alexey Blokhin, Sergey Maleev, Nikolay Makhov, Ivan Kryzhanovskaya, Natalia Karachinsky, Leonid Novikov, Innokenty Egorov, Anton Optics Mesoscale and Nanoscale Physics High-quality planar cavities with low-absorption mirrors based on $Al_{0.2}Ga_{0.8}As/Al_{0.9}Ga_{0.1}As$ layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and quality-factor at the threshold are (4.2$\pm$0.3) $kW/cm^2$ and (6800$\pm$220). Increasing the pump level above two thresholds lead to an enlargement in the quality-factor to at least 19000. Efficient lateral heat dissipation in the planar semiconductor microcavity is confirmed by a low mode-energy shift of approximately 400 $μ$eV at two lasing thresholds. |
| title | Room-temperature, continuous wave lasing in planar microcavities with quantum dots |
| topic | Optics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2602.21742 |