Mott Intermittency at the Metal-Insulator Boundary

Fuente: arXiv
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Autores principales: Wang, Yuxin, Dobrosavljević, Vladimir, Jaroszyński, Jan, Saito, Yohei, Kawamoto, Atsushi, Pustogow, Andrej, Dressel, Martin, Popović, Dragana
Formato: Preprint
Publicado: 2026
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author Wang, Yuxin
Dobrosavljević, Vladimir
Jaroszyński, Jan
Saito, Yohei
Kawamoto, Atsushi
Pustogow, Andrej
Dressel, Martin
Popović, Dragana
author_facet Wang, Yuxin
Dobrosavljević, Vladimir
Jaroszyński, Jan
Saito, Yohei
Kawamoto, Atsushi
Pustogow, Andrej
Dressel, Martin
Popović, Dragana
contents The resistivity maximum at a temperature $T=T_{\mathrm{max}}$ is a recurring feature of bandwidth-tuned Mott systems, yet its meaning remains controversial: is it a coherence-incoherence crossover of an electronically homogeneous metal, or does it mark the onset of transport through a mixed landscape of metallic and insulating regions? Even more debated is whether a true phase-coexistence regime survives in the relevant parameter range, or whether apparent inhomogeneity is merely extrinsic. Here we address these questions by moving beyond temperature sweeps and probe charge transport in the time domain. Near $T=T_{\mathrm{max}}$, we find that the resistance of a model system, a quasi-two-dimensional Mott spin liquid material, exhibits clear random-telegraph switching between discrete levels over long timescales. The statistics of the switching - sharp two-level behavior with thermally activated dwell times - point to a mesoscopic "current-controlling" region that dynamically toggles between metallic and insulating states, intermittently opening and closing the dominant conduction channel. This characteristic fluctuating dynamics provides direct evidence for intrinsic metal-insulator coexistence and establishes $T\sim T_{\mathrm{max}}$ as the regime of Mott intermittency, where transport is governed by stochastic domain switching rather than quasiparticle decoherence.
format Preprint
id arxiv_https___arxiv_org_abs_2602_22093
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Mott Intermittency at the Metal-Insulator Boundary
Wang, Yuxin
Dobrosavljević, Vladimir
Jaroszyński, Jan
Saito, Yohei
Kawamoto, Atsushi
Pustogow, Andrej
Dressel, Martin
Popović, Dragana
Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
The resistivity maximum at a temperature $T=T_{\mathrm{max}}$ is a recurring feature of bandwidth-tuned Mott systems, yet its meaning remains controversial: is it a coherence-incoherence crossover of an electronically homogeneous metal, or does it mark the onset of transport through a mixed landscape of metallic and insulating regions? Even more debated is whether a true phase-coexistence regime survives in the relevant parameter range, or whether apparent inhomogeneity is merely extrinsic. Here we address these questions by moving beyond temperature sweeps and probe charge transport in the time domain. Near $T=T_{\mathrm{max}}$, we find that the resistance of a model system, a quasi-two-dimensional Mott spin liquid material, exhibits clear random-telegraph switching between discrete levels over long timescales. The statistics of the switching - sharp two-level behavior with thermally activated dwell times - point to a mesoscopic "current-controlling" region that dynamically toggles between metallic and insulating states, intermittently opening and closing the dominant conduction channel. This characteristic fluctuating dynamics provides direct evidence for intrinsic metal-insulator coexistence and establishes $T\sim T_{\mathrm{max}}$ as the regime of Mott intermittency, where transport is governed by stochastic domain switching rather than quasiparticle decoherence.
title Mott Intermittency at the Metal-Insulator Boundary
topic Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2602.22093