Electromechanical Switching and Momentum-Selective Transport in Geometry-Defined Blue Phosphorus Homojunctions

Fuente: arXiv
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Autori principali: Wu, Zewen, Zhou, Min, Xing, Yanxia, Kong, Xianghua
Natura: Preprint
Pubblicazione: 2026
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author Wu, Zewen
Zhou, Min
Xing, Yanxia
Kong, Xianghua
author_facet Wu, Zewen
Zhou, Min
Xing, Yanxia
Kong, Xianghua
contents Developing intrinsic homojunctions without chemical heterogeneity remains a key challenge in future two - dimensional devices. Here, we report a geometry - defined metal--semiconductor--metal homojunction in bilayer blue phosphorus (BlueP) created by a localized bubble corrugation, without chemical doping or foreign - material interfaces. First - principles calculations show that enlarging the interlayer separation in the metallic A\(_1\)B\(_1\) - stacked BlueP bilayer opens a band gap, enabling a semiconducting barrier embedded between metallic segments. First - principles quantum - transport simulations reveal a crossover from ballistic to tunneling transport upon bubble formation. In the tunneling regime, transmission decreases exponentially with bubble width while remaining weakly sensitive to bubble height and bulging direction. The junction acts as an orientation - dependent \(k\) - space filter, producing transport anisotropy and momentum selectivity. Orbital - resolved scattering analysis shows that intralayer - bonding channels persist under deformation whereas interlayer - hybridized channels are quenched, and that σ- type bonding yields higher conductance than π- type bonding. These insights motivate two electromechanical device concepts: a mechanically switchable memory element with ON/OFF ratios up to 30 and a nanoscale sliding rheostat with reproducible exponential resistance tuning for Å- scale displacement sensing.
format Preprint
id arxiv_https___arxiv_org_abs_2602_23298
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Electromechanical Switching and Momentum-Selective Transport in Geometry-Defined Blue Phosphorus Homojunctions
Wu, Zewen
Zhou, Min
Xing, Yanxia
Kong, Xianghua
Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
Developing intrinsic homojunctions without chemical heterogeneity remains a key challenge in future two - dimensional devices. Here, we report a geometry - defined metal--semiconductor--metal homojunction in bilayer blue phosphorus (BlueP) created by a localized bubble corrugation, without chemical doping or foreign - material interfaces. First - principles calculations show that enlarging the interlayer separation in the metallic A\(_1\)B\(_1\) - stacked BlueP bilayer opens a band gap, enabling a semiconducting barrier embedded between metallic segments. First - principles quantum - transport simulations reveal a crossover from ballistic to tunneling transport upon bubble formation. In the tunneling regime, transmission decreases exponentially with bubble width while remaining weakly sensitive to bubble height and bulging direction. The junction acts as an orientation - dependent \(k\) - space filter, producing transport anisotropy and momentum selectivity. Orbital - resolved scattering analysis shows that intralayer - bonding channels persist under deformation whereas interlayer - hybridized channels are quenched, and that σ- type bonding yields higher conductance than π- type bonding. These insights motivate two electromechanical device concepts: a mechanically switchable memory element with ON/OFF ratios up to 30 and a nanoscale sliding rheostat with reproducible exponential resistance tuning for Å- scale displacement sensing.
title Electromechanical Switching and Momentum-Selective Transport in Geometry-Defined Blue Phosphorus Homojunctions
topic Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
url https://arxiv.org/abs/2602.23298