Molecular Beam Epitaxy Growth of Wafer-scale SnSe van der Waals Ultrathin Layers
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866908854828138496 |
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| author | Zhang, Qihua Hilse, Maria Bardsley, Joshua Applegate, Morgan Law, Stephanie |
| author_facet | Zhang, Qihua Hilse, Maria Bardsley, Joshua Applegate, Morgan Law, Stephanie |
| contents | Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature synthesis technique to obtain wafer-scale, high-quality ultrathin SnSe layers is crucial. In this work, we present a comprehensive study on the effect of growth parameters on the material quality of ultrathin SnSe thin films grown by molecular beam epitaxy. A growth window including substrate temperature of 210-270°C and low Se/Sn flux ratio with Se valve position of 10-30 mils has been identified which results in SnSe films with root-mean-square (RMS) roughness as low as 0.6 nm and full-width-at-half-maximum (FWHM) of 0.1° in SnSe (400) x-ray diffraction (XRD) rocking curve. Finally, using a three-step growth approach, we demonstrate wafer-scale coalesced ultrathin SnSe layers with thicknesses from 20 nm down to 5 nm, with good crystallinity, structural quality, and surface morphology. This work establishes a growth condition framework for MBE-grown SnSe and presents a viable route for developing wafer-scale single-layer films, unlocking the potential of this highly promising material for advanced device integration. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_23346 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Molecular Beam Epitaxy Growth of Wafer-scale SnSe van der Waals Ultrathin Layers Zhang, Qihua Hilse, Maria Bardsley, Joshua Applegate, Morgan Law, Stephanie Materials Science Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature synthesis technique to obtain wafer-scale, high-quality ultrathin SnSe layers is crucial. In this work, we present a comprehensive study on the effect of growth parameters on the material quality of ultrathin SnSe thin films grown by molecular beam epitaxy. A growth window including substrate temperature of 210-270°C and low Se/Sn flux ratio with Se valve position of 10-30 mils has been identified which results in SnSe films with root-mean-square (RMS) roughness as low as 0.6 nm and full-width-at-half-maximum (FWHM) of 0.1° in SnSe (400) x-ray diffraction (XRD) rocking curve. Finally, using a three-step growth approach, we demonstrate wafer-scale coalesced ultrathin SnSe layers with thicknesses from 20 nm down to 5 nm, with good crystallinity, structural quality, and surface morphology. This work establishes a growth condition framework for MBE-grown SnSe and presents a viable route for developing wafer-scale single-layer films, unlocking the potential of this highly promising material for advanced device integration. |
| title | Molecular Beam Epitaxy Growth of Wafer-scale SnSe van der Waals Ultrathin Layers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2602.23346 |