Spontaneous Fully Compensated Ferrimagnetism
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arXiv
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| Auteurs principaux: | , , , |
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| Format: | Preprint |
| Publié: |
2026
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| _version_ | 1866914357954215936 |
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| author | Wang, Bingbing Li, Yongpan Liu, Yichen Liu, Cheng-Cheng |
| author_facet | Wang, Bingbing Li, Yongpan Liu, Yichen Liu, Cheng-Cheng |
| contents | We propose a general mechanism for the spontaneous emergence of filling-enforced fully compensated ferrimagnetism (fFIM), characterized by zero net magnetization yet ferromagnetic-like spin-split band structures. Using Hartree-Fock mean-field calculations of the Hubbard model, we map out the stability regime of spontaneous fFIM over a broad parameter space of interaction strength and staggered potential. We show the unique quantum-geometry-governed optical selection rules and the abundant valley- and spin-related physics of electronics and optics arising from the emergence of fFIM order, with tunable spin-polarized and valley-contrasting charge and spin currents. Furthermore, based on our theory, we demonstrate that spontaneous fFIM can be realized in nominally nonmagnetic graphene via defect engineering. Our results establish a unified framework for the mechanism, emergent properties, and materials realization of spontaneous fFIM, opening new opportunities for spintronic, valleytronic, and optoelectronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_24135 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Spontaneous Fully Compensated Ferrimagnetism Wang, Bingbing Li, Yongpan Liu, Yichen Liu, Cheng-Cheng Strongly Correlated Electrons Mesoscale and Nanoscale Physics Materials Science We propose a general mechanism for the spontaneous emergence of filling-enforced fully compensated ferrimagnetism (fFIM), characterized by zero net magnetization yet ferromagnetic-like spin-split band structures. Using Hartree-Fock mean-field calculations of the Hubbard model, we map out the stability regime of spontaneous fFIM over a broad parameter space of interaction strength and staggered potential. We show the unique quantum-geometry-governed optical selection rules and the abundant valley- and spin-related physics of electronics and optics arising from the emergence of fFIM order, with tunable spin-polarized and valley-contrasting charge and spin currents. Furthermore, based on our theory, we demonstrate that spontaneous fFIM can be realized in nominally nonmagnetic graphene via defect engineering. Our results establish a unified framework for the mechanism, emergent properties, and materials realization of spontaneous fFIM, opening new opportunities for spintronic, valleytronic, and optoelectronic applications. |
| title | Spontaneous Fully Compensated Ferrimagnetism |
| topic | Strongly Correlated Electrons Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2602.24135 |