Tuning the memristive response of TaO$_x$-based devices with Ag Nanoparticles
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
| Publié: |
2026
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| _version_ | 1866908856125227008 |
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| author | Martir, R. Leal van der Ree, A. J. T. Aguirre, M. H. Palasantzas, G. Rubi, D. Sánchez, M. J. |
| author_facet | Martir, R. Leal van der Ree, A. J. T. Aguirre, M. H. Palasantzas, G. Rubi, D. Sánchez, M. J. |
| contents | Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs) embedded in the top electrode of Pt/Ta2O5/TaO2/Pt memristors and analyze their RS behavior and statistical stability. Devices without AgNPs exhibit two hysteresis switching loops (HSLs) with opposite chiralities, originating from the participation of the Pt/Ta2O5 top interface and the Ta2O5/TaO2 bottom interface. Incorporating AgNPs reduces the overall device resistance and selectively suppresses one loop, yielding a single, well-defined switching mode. Moreover, devices incorporating Ag-NPs show markedly reduced cycle-to-cycle variability of the high-resistance state, as confirmed by Weibull analysis, indicating improved endurance and switching reproducibility. Within a filamentary RS framework, we attribute this behavior to local metallization of the top interface by AgNPs, which partially inhibit OV transport and confines the RS dynamics to the bottom interface. Numerical simulations with the Oxygen Vacancy Resistive Network (OVRN) model succesfully reproduce the experimental HSLs, statistical trends, and tunable ON/OFF ratios with AgNPs coverage. These findings demonstrate that targeted interface metallization via metallic nanoparticles provides an effective route to control multi-interface RS dynamics and improve switching stability in without modifying the oxide architecture. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2602_24168 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Tuning the memristive response of TaO$_x$-based devices with Ag Nanoparticles Martir, R. Leal van der Ree, A. J. T. Aguirre, M. H. Palasantzas, G. Rubi, D. Sánchez, M. J. Mesoscale and Nanoscale Physics Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs) embedded in the top electrode of Pt/Ta2O5/TaO2/Pt memristors and analyze their RS behavior and statistical stability. Devices without AgNPs exhibit two hysteresis switching loops (HSLs) with opposite chiralities, originating from the participation of the Pt/Ta2O5 top interface and the Ta2O5/TaO2 bottom interface. Incorporating AgNPs reduces the overall device resistance and selectively suppresses one loop, yielding a single, well-defined switching mode. Moreover, devices incorporating Ag-NPs show markedly reduced cycle-to-cycle variability of the high-resistance state, as confirmed by Weibull analysis, indicating improved endurance and switching reproducibility. Within a filamentary RS framework, we attribute this behavior to local metallization of the top interface by AgNPs, which partially inhibit OV transport and confines the RS dynamics to the bottom interface. Numerical simulations with the Oxygen Vacancy Resistive Network (OVRN) model succesfully reproduce the experimental HSLs, statistical trends, and tunable ON/OFF ratios with AgNPs coverage. These findings demonstrate that targeted interface metallization via metallic nanoparticles provides an effective route to control multi-interface RS dynamics and improve switching stability in without modifying the oxide architecture. |
| title | Tuning the memristive response of TaO$_x$-based devices with Ag Nanoparticles |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2602.24168 |