Copertina

Tuning the memristive response of TaO$_x$-based devices with Ag Nanoparticles

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Martir, R. Leal, van der Ree, A. J. T., Aguirre, M. H., Palasantzas, G., Rubi, D., Sánchez, M. J.
Natura:	Preprint
Pubblicazione:	2026
Soggetti:	Mesoscale and Nanoscale Physics
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Oxygen vacancies kinetics in $TaO_{2-h}$/$Ta_{2}$$O_{5-x}$ memristive interfaces
di: Ferreyra, C., et al.
Pubblicazione: (2024)

On the origin of filamentary resistive switching in oxides-based memristive devices
di: Martir, R. Leal, et al.
Pubblicazione: (2024)

Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies
di: Quiñonez, Walter, et al.
Pubblicazione: (2025)

Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
di: Martir, Rodrigo Leal, et al.
Pubblicazione: (2022)

Stochastic resonance in a metal-oxide memristive device
di: Mikhaylov, A. N., et al.
Pubblicazione: (2024)

Modeling the variability of memristive devices with hexagonal boron nitride as dielectric
di: Roldan, Juan B., et al.
Pubblicazione: (2024)

Coexistence of resistive capacitive and virtual inductive effects in memristive devices
di: Yarragolla, Sahitya, et al.
Pubblicazione: (2024)

Nonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems
di: Yarragolla, Sahitya, et al.
Pubblicazione: (2024)

Electrodrying in nanopores: from fundamentals to iontronic and memristive applications
di: Di Muccio, Giovanni, et al.
Pubblicazione: (2025)

Modeling Memristor-Based Neural Networks with Manhattan Update: Trade-offs in Learning Performance and Energy Consumption
di: Quiñonez, Walter, et al.
Pubblicazione: (2025)

A scalable kinetic Monte Carlo platform enabling comprehensive simulations of charge transport dynamics in polymer-based memristive systems
di: Gutiérrez-Finol, Gerliz M., et al.
Pubblicazione: (2025)

Optical control of multiple resistance levels in graphene for memristic applications
di: Mann, Harsimran Kaur, et al.
Pubblicazione: (2024)

Predictive simulations of the dynamical response of mesoscopic devices
di: Boutin, Samuel, et al.
Pubblicazione: (2025)

Material transfer and contact optimization in MoS2 nanotube devices
di: Schock, R. T. K., et al.
Pubblicazione: (2024)

Tuning the Surface States of $Fe_3O_4$ Nanoparticles for Enhanced Magnetic Anisotropy and Induction Efficacy
di: Portwin, Kyle A., et al.
Pubblicazione: (2025)

Gradient-based optimization of spintronic devices
di: Imai, Yusuke, et al.
Pubblicazione: (2024)

Automated in situ optimization and disorder mitigation in a quantum device
di: Benestad, Jacob, et al.
Pubblicazione: (2024)

Nonreciprocal conductance in uniformly dissipative devices
di: Solow, Oliver, et al.
Pubblicazione: (2026)

Magnon polaritons in a van der Waals ferromagnet coupled to a superconducting resonator
di: Bermejillo-Seco, Alvaro, et al.
Pubblicazione: (2026)

Mesoporous Thin Films as Nanoreactors for Complex Oxide Nanoparticle-based Devices
di: Passanante, S., et al.
Pubblicazione: (2025)

Formation of Light-Emitting Defects in Ag-based Memristors
di: Singh, Diana, et al.
Pubblicazione: (2025)

Cycle equivalence classes, orthogonal Weingarten calculus, and the mean field theory of memristive systems
di: Caravelli, Francesco
Pubblicazione: (2023)

Spectral analysis of the magneto-optical response in valley polarized Pb$_{1-x}$Sn$_x$Se
di: Ding, Xiaoqi, et al.
Pubblicazione: (2024)

Compressed gate characterization for quantum devices with time-correlated noise
di: Gullans, M. J., et al.
Pubblicazione: (2023)

Electrostatic gate-controlled quantum interference in a high-mobility two-dimensional electron gas at the (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_3$/SrTiO$_3$ interface
di: Rubi, Km, et al.
Pubblicazione: (2025)

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films
di: Freitas, Inês, et al.
Pubblicazione: (2026)

Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
di: Mendoza-Rodarte, J. Aaron, et al.
Pubblicazione: (2024)

Imaging current flow and injection in scalable graphene devices through NV-magnetometry
di: Dockx, Kaj, et al.
Pubblicazione: (2025)

Classical and single photon memory devices based on polariton lasers
di: Novokreschenov, D., et al.
Pubblicazione: (2025)

Composite based magnetoelectric scaled devices with large output voltages
di: Van Meirvenne, Emma, et al.
Pubblicazione: (2026)

Manipulating moires by controlling heterostrain in van der Waals devices
di: Sequeira, Ian, et al.
Pubblicazione: (2024)

Donor-bound-exciton strain microscopy in silicon devices
di: Conti, Pierandrea, et al.
Pubblicazione: (2024)

Extending the Takagi-Taupin equations for x-ray nanobeam Bragg coherent diffraction
di: Zhou, T., et al.
Pubblicazione: (2024)

Tuning the Josephson diode response with an ac current
di: Souto, Rubén Seoane, et al.
Pubblicazione: (2023)

Spintronic devices as next-generation computation accelerators
di: González, Victor H., et al.
Pubblicazione: (2024)

A proposal for skyrmion-based diode-like device in antiferromagnetic nanostripe
di: Silva, R. C., et al.
Pubblicazione: (2024)

Non-Hermitian topological devices with Chern insulators
di: Ochkan, Kyrylo, et al.
Pubblicazione: (2025)

Gate reflectometry in a minimal Kitaev chain device
di: Zhang, Yining, et al.
Pubblicazione: (2025)

Heat dissipation mechanisms in hybrid superconductor-semiconductor devices revealed by Joule spectroscopy
di: Ibabe, Angel, et al.
Pubblicazione: (2023)

Memristive Switches in Rigid Conjugated Single-Molecule Junctions
di: Conte, Riccardo, et al.
Pubblicazione: (2026)