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Hauptverfasser: Liu, Yu, Chen, Yi-Xiu, Liang, Haotong, Takeuchi, Ichiro, Kalinin, Sergei V.
Format: Preprint
Veröffentlicht: 2026
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Online-Zugang:https://arxiv.org/abs/2602.24216
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author Liu, Yu
Chen, Yi-Xiu
Liang, Haotong
Takeuchi, Ichiro
Kalinin, Sergei V.
author_facet Liu, Yu
Chen, Yi-Xiu
Liang, Haotong
Takeuchi, Ichiro
Kalinin, Sergei V.
contents Resolving growth mechanisms and thickness evolution of functional properties is one of the key tasks in materials discovery and optimization involving thin-film materials, traditionally requiring significant experimental budgets. Here we introduce the combination of thickness-gradient libraries and automated scanning probe microscopy as a systematic pathway to elucidate growth modes and disentangle ferroelectric and electrochemical contributions in ferroelectric thin films. As a model system, we explore the Hf0.5Zr0.5O2 (HZO) gradient thin films grown on LaxSr1-xMnO3 (LSMO) bottom electrode thin films. Automated piezoresponse force microscopy, spectroscopy, and lithography reveals that irreversible topographic deformation arises from electrochemical activity at the LSMO surface, whereas reversible phase inversion in HZO reflects ferroelectric switching. Automated topography height-map scans are used to further quantify nucleation density, particle-size evolution, and roughness correlations across the thickness-gradient, demonstrating that improved plume stabilization during growth suppresses interfacial reactions and promotes dense, fine-grained HZO conducive to ferroelectric phase formation. This combined materials-engineering and automated-SPM framework establishes a platform for high-throughput, mechanism-resolved characterization of ferroionic and ferroelectric responses in complex oxide films.
format Preprint
id arxiv_https___arxiv_org_abs_2602_24216
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Mechanism-Resolved PFM of Ferroionic and Ferroelectric Responses in Thickness-Gradient Hf0.5Zr0.5O2 Libraries
Liu, Yu
Chen, Yi-Xiu
Liang, Haotong
Takeuchi, Ichiro
Kalinin, Sergei V.
Materials Science
Mesoscale and Nanoscale Physics
Resolving growth mechanisms and thickness evolution of functional properties is one of the key tasks in materials discovery and optimization involving thin-film materials, traditionally requiring significant experimental budgets. Here we introduce the combination of thickness-gradient libraries and automated scanning probe microscopy as a systematic pathway to elucidate growth modes and disentangle ferroelectric and electrochemical contributions in ferroelectric thin films. As a model system, we explore the Hf0.5Zr0.5O2 (HZO) gradient thin films grown on LaxSr1-xMnO3 (LSMO) bottom electrode thin films. Automated piezoresponse force microscopy, spectroscopy, and lithography reveals that irreversible topographic deformation arises from electrochemical activity at the LSMO surface, whereas reversible phase inversion in HZO reflects ferroelectric switching. Automated topography height-map scans are used to further quantify nucleation density, particle-size evolution, and roughness correlations across the thickness-gradient, demonstrating that improved plume stabilization during growth suppresses interfacial reactions and promotes dense, fine-grained HZO conducive to ferroelectric phase formation. This combined materials-engineering and automated-SPM framework establishes a platform for high-throughput, mechanism-resolved characterization of ferroionic and ferroelectric responses in complex oxide films.
title Mechanism-Resolved PFM of Ferroionic and Ferroelectric Responses in Thickness-Gradient Hf0.5Zr0.5O2 Libraries
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2602.24216