Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2603.00146 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866908856899076096 |
|---|---|
| author | Ghosh, Bristi Bandyopadhyay, Malay Nandy, Snehasish |
| author_facet | Ghosh, Bristi Bandyopadhyay, Malay Nandy, Snehasish |
| contents | The photogalvanic effect (PGE), a fundamental nonlinear optical phenomenon in non-centrosymmetric materials, generates direct photocurrent under polarized light. Using quantum kinetic theory within the relaxation-time approximation, we theoretically investigate the PGE as a probe of quantum geometry in anisotropic type-I and type-II semi-Dirac (SD) systems, characterized by distinct electronic structures. We systematically analyse various microscopic contributions to the PGE conductivity, including injection, shift, resonance, higher-order pole, and anomalous terms, and emphasize their connections to different quantum geometric quantities, namely, Berry curvature, quantum metric, and metric connection. By studying the frequency and chemical-potential dependence of the PGE conductivity in SD systems, we find that the optical conductivities in the type-II case are significantly enhanced relative to those in type-I. For the circular PGE (CPGE), Berry-curvature-driven contributions remain qualitatively similar in both phases, whereas the linear PGE (LPGE) displays clear qualitative differences. In particular, the $xxx$ component of the shift conductivity in the type-II phase reverses sign upon tuning the perturbation parameter $δ$, providing a direct signature of the Lifshitz transition. In contrast, other components remain sign-invariant, as in type-I SD systems. These combined CPGE and LPGE signatures provide an unambiguous distinction between the two SD phases. The predicted effects, realizable in TiO$_2$/VO$_2$ heterostructures, establish PGE as a sensitive probe of quantum geometry with potential applications in polarization-selective photodetection, optical rectification, and next-generation optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_00146 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Quantum geometry-driven photogalvanic responses in semi-Dirac systems Ghosh, Bristi Bandyopadhyay, Malay Nandy, Snehasish Mesoscale and Nanoscale Physics Strongly Correlated Electrons Quantum Physics The photogalvanic effect (PGE), a fundamental nonlinear optical phenomenon in non-centrosymmetric materials, generates direct photocurrent under polarized light. Using quantum kinetic theory within the relaxation-time approximation, we theoretically investigate the PGE as a probe of quantum geometry in anisotropic type-I and type-II semi-Dirac (SD) systems, characterized by distinct electronic structures. We systematically analyse various microscopic contributions to the PGE conductivity, including injection, shift, resonance, higher-order pole, and anomalous terms, and emphasize their connections to different quantum geometric quantities, namely, Berry curvature, quantum metric, and metric connection. By studying the frequency and chemical-potential dependence of the PGE conductivity in SD systems, we find that the optical conductivities in the type-II case are significantly enhanced relative to those in type-I. For the circular PGE (CPGE), Berry-curvature-driven contributions remain qualitatively similar in both phases, whereas the linear PGE (LPGE) displays clear qualitative differences. In particular, the $xxx$ component of the shift conductivity in the type-II phase reverses sign upon tuning the perturbation parameter $δ$, providing a direct signature of the Lifshitz transition. In contrast, other components remain sign-invariant, as in type-I SD systems. These combined CPGE and LPGE signatures provide an unambiguous distinction between the two SD phases. The predicted effects, realizable in TiO$_2$/VO$_2$ heterostructures, establish PGE as a sensitive probe of quantum geometry with potential applications in polarization-selective photodetection, optical rectification, and next-generation optoelectronic devices. |
| title | Quantum geometry-driven photogalvanic responses in semi-Dirac systems |
| topic | Mesoscale and Nanoscale Physics Strongly Correlated Electrons Quantum Physics |
| url | https://arxiv.org/abs/2603.00146 |