Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2603.00817 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866912934455672832 |
|---|---|
| author | Raab, Noam Yadav, Renu Bloch, Yakov Yeo, Youngki Maoz, Chen Plutnarova, Iva Sofer, Zdenek Kenji, Watanabe Taniguchi, Takashi Shalom, Moshe Ben |
| author_facet | Raab, Noam Yadav, Renu Bloch, Yakov Yeo, Youngki Maoz, Chen Plutnarova, Iva Sofer, Zdenek Kenji, Watanabe Taniguchi, Takashi Shalom, Moshe Ben |
| contents | Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional FTJs has been hindered by high coercive voltages, low readout currents, limited cycling endurance, and significant device-to-device variability. Here, we overcome these bottlenecks by introducing the sliding ferroelectric resonant tunnel (SFeRT) junction, integrating three cooperative mechanisms: (i) spontaneous interfacial polarization of atomically thin, depolarization-resilient barriers; (ii) superlubric sliding of shear-solitons, enabling ultra-low-friction, wear-free switching; and (iii) momentum-conserving, elastic resonant tunneling between lattice-aligned graphitic electrodes, providing sensitive readouts at both positive and negative biases. We demonstrate nanometer-scale SFeRT junctions using polar polytypes of hexagonal boron nitride (hBN) or transition metal dichalcogenides (TMDs) as barriers, achieving configurable writing voltages below $0.5$ V and tunable reading biases under $0.1$ V. These devices yield current densities exceeding $50$ nA $μ$m$^{-2}$, with a robust room-temperature ON/OFF ratio $> 7$.
The crystalline and polarization integrity of sliding van der Waals (vdW) polytypes, down to the atomically thin limit, ensures exceptional device uniformity and performance that remains scalable down to sub-$0.1$ $μ$m$^{2}$ footprints. Furthermore, we provide a predictive model for SFeRT performance across diverse doping levels, temperatures, electrodes, and polytype configurations. Integrated within a Superlubric Array of Polytypes (SLAP) architecture, SFeRT junctions enable switching energies below $1$ fJ, establishing a scalable and durable foundation for low-energy ``slidetronic'' logic and memory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_00817 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | A Sliding Ferroelectric Resonant Tunnel Junction Raab, Noam Yadav, Renu Bloch, Yakov Yeo, Youngki Maoz, Chen Plutnarova, Iva Sofer, Zdenek Kenji, Watanabe Taniguchi, Takashi Shalom, Moshe Ben Other Condensed Matter Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional FTJs has been hindered by high coercive voltages, low readout currents, limited cycling endurance, and significant device-to-device variability. Here, we overcome these bottlenecks by introducing the sliding ferroelectric resonant tunnel (SFeRT) junction, integrating three cooperative mechanisms: (i) spontaneous interfacial polarization of atomically thin, depolarization-resilient barriers; (ii) superlubric sliding of shear-solitons, enabling ultra-low-friction, wear-free switching; and (iii) momentum-conserving, elastic resonant tunneling between lattice-aligned graphitic electrodes, providing sensitive readouts at both positive and negative biases. We demonstrate nanometer-scale SFeRT junctions using polar polytypes of hexagonal boron nitride (hBN) or transition metal dichalcogenides (TMDs) as barriers, achieving configurable writing voltages below $0.5$ V and tunable reading biases under $0.1$ V. These devices yield current densities exceeding $50$ nA $μ$m$^{-2}$, with a robust room-temperature ON/OFF ratio $> 7$. The crystalline and polarization integrity of sliding van der Waals (vdW) polytypes, down to the atomically thin limit, ensures exceptional device uniformity and performance that remains scalable down to sub-$0.1$ $μ$m$^{2}$ footprints. Furthermore, we provide a predictive model for SFeRT performance across diverse doping levels, temperatures, electrodes, and polytype configurations. Integrated within a Superlubric Array of Polytypes (SLAP) architecture, SFeRT junctions enable switching energies below $1$ fJ, establishing a scalable and durable foundation for low-energy ``slidetronic'' logic and memory. |
| title | A Sliding Ferroelectric Resonant Tunnel Junction |
| topic | Other Condensed Matter |
| url | https://arxiv.org/abs/2603.00817 |