Single impurity-induced localization transitions in electronic systems

Fuente: arXiv
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Autores principales: Khan, Niaz Ali, Jan, Munsif, Shah, Muzamil, Sajid, Muhammad, Mateen, Muhammad, Ali, Mushtaq
Formato: Preprint
Publicado: 2026
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author Khan, Niaz Ali
Jan, Munsif
Shah, Muzamil
Sajid, Muhammad
Mateen, Muhammad
Ali, Mushtaq
author_facet Khan, Niaz Ali
Jan, Munsif
Shah, Muzamil
Sajid, Muhammad
Mateen, Muhammad
Ali, Mushtaq
contents Anderson localization is a fundamental phenomenon in disordered quantum systems, where transport is suppressed by wave interference from extensive randomness. Moving beyond traditional multi-impurity scenarios, we investigate impurity-induced localization phenomena in low-dimensional tight-binding systems by focusing on the properties of impurity-generated bound states. By introducing a single on-site impurity into an otherwise extended lattice, we demonstrate that the impurity can host a bound state whose spatial character undergoes a transition from extended to localized as the impurity strength surpasses a critical value. This transition pertains solely to the impurity state, while the bulk states of the host system remain extended. We characterize the localization behavior by analyzing two distinct spatial profiles of the bound states: one with symmetric decay and another with exponential decay from the impurity site. Our results highlight how a local perturbation can induce nontrivial localization behavior at the level of individual eigenstates, without implying a global localization transition of the underlying electronic system.
format Preprint
id arxiv_https___arxiv_org_abs_2603_01497
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Single impurity-induced localization transitions in electronic systems
Khan, Niaz Ali
Jan, Munsif
Shah, Muzamil
Sajid, Muhammad
Mateen, Muhammad
Ali, Mushtaq
Disordered Systems and Neural Networks
Quantum Physics
Anderson localization is a fundamental phenomenon in disordered quantum systems, where transport is suppressed by wave interference from extensive randomness. Moving beyond traditional multi-impurity scenarios, we investigate impurity-induced localization phenomena in low-dimensional tight-binding systems by focusing on the properties of impurity-generated bound states. By introducing a single on-site impurity into an otherwise extended lattice, we demonstrate that the impurity can host a bound state whose spatial character undergoes a transition from extended to localized as the impurity strength surpasses a critical value. This transition pertains solely to the impurity state, while the bulk states of the host system remain extended. We characterize the localization behavior by analyzing two distinct spatial profiles of the bound states: one with symmetric decay and another with exponential decay from the impurity site. Our results highlight how a local perturbation can induce nontrivial localization behavior at the level of individual eigenstates, without implying a global localization transition of the underlying electronic system.
title Single impurity-induced localization transitions in electronic systems
topic Disordered Systems and Neural Networks
Quantum Physics
url https://arxiv.org/abs/2603.01497