4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench

Fuente: arXiv
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Autores principales: Vovk, N. A., Matveev, G. A., Mumlyakov, M. A., Shibalov, M. V., Filippov, I. A., Burkov, I. D., Perov, S. D., Porohov, N. V., Osipov, N. N., Tarkhov, M. A.
Formato: Preprint
Publicado: 2026
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author Vovk, N. A.
Matveev, G. A.
Mumlyakov, M. A.
Shibalov, M. V.
Filippov, I. A.
Burkov, I. D.
Perov, S. D.
Porohov, N. V.
Osipov, N. N.
Tarkhov, M. A.
author_facet Vovk, N. A.
Matveev, G. A.
Mumlyakov, M. A.
Shibalov, M. V.
Filippov, I. A.
Burkov, I. D.
Perov, S. D.
Porohov, N. V.
Osipov, N. N.
Tarkhov, M. A.
contents In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si$_3$N$_4$) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches $3800~\mathrm{V/W}$ at a modulation frequency of $3~\mathrm{GHz}$. We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).
format Preprint
id arxiv_https___arxiv_org_abs_2603_01676
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle 4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench
Vovk, N. A.
Matveev, G. A.
Mumlyakov, M. A.
Shibalov, M. V.
Filippov, I. A.
Burkov, I. D.
Perov, S. D.
Porohov, N. V.
Osipov, N. N.
Tarkhov, M. A.
Superconductivity
In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si$_3$N$_4$) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches $3800~\mathrm{V/W}$ at a modulation frequency of $3~\mathrm{GHz}$. We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).
title 4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench
topic Superconductivity
url https://arxiv.org/abs/2603.01676