Graphene-capped bismuthene on SiC as a platform for correlated quantum spin Hall edge states
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866917308378644480 |
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| author | Ngo, Huu Thoai Mamiyev, Zamin Tilgner, Niclas Unigarro, Andres David Pena Gemming, Sibylle Seyller, Thomas Tegenkamp, Christoph |
| author_facet | Ngo, Huu Thoai Mamiyev, Zamin Tilgner, Niclas Unigarro, Andres David Pena Gemming, Sibylle Seyller, Thomas Tegenkamp, Christoph |
| contents | Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here we realize bismuthene islands by intercalating Bi beneath zero-layer graphene on SiC(0001) followed by hydrogen treatment, yielding well-defined edges with controlled terminations. Spectroscopic measurements demonstrate that the edge states reside inside the bulk band gap and remain charge neutral. The graphene overlayer interacts only weakly with the bismuthene, preserving its topological character while providing environmental protection. Notably, the one-dimensional edge channels exhibit signatures of enhanced electronic correlations relative to freestanding bismuthene, suggesting proximity-induced modification of the QSH edge physics. These results establish graphene-capped bismuthene as a robust and tunable platform for correlated quantum spin Hall states. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_02397 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Graphene-capped bismuthene on SiC as a platform for correlated quantum spin Hall edge states Ngo, Huu Thoai Mamiyev, Zamin Tilgner, Niclas Unigarro, Andres David Pena Gemming, Sibylle Seyller, Thomas Tegenkamp, Christoph Mesoscale and Nanoscale Physics Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here we realize bismuthene islands by intercalating Bi beneath zero-layer graphene on SiC(0001) followed by hydrogen treatment, yielding well-defined edges with controlled terminations. Spectroscopic measurements demonstrate that the edge states reside inside the bulk band gap and remain charge neutral. The graphene overlayer interacts only weakly with the bismuthene, preserving its topological character while providing environmental protection. Notably, the one-dimensional edge channels exhibit signatures of enhanced electronic correlations relative to freestanding bismuthene, suggesting proximity-induced modification of the QSH edge physics. These results establish graphene-capped bismuthene as a robust and tunable platform for correlated quantum spin Hall states. |
| title | Graphene-capped bismuthene on SiC as a platform for correlated quantum spin Hall edge states |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.02397 |