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Main Authors: Kim, Hyeon Woo, Lee, Han Uk, Mishra, Rohan, Cho, Sung Beom
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2603.02466
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author Kim, Hyeon Woo
Lee, Han Uk
Mishra, Rohan
Cho, Sung Beom
author_facet Kim, Hyeon Woo
Lee, Han Uk
Mishra, Rohan
Cho, Sung Beom
contents Vapor deposition allows for the synthesis of metastable polymorphs with unique properties, yet polymorph selection remains largely empirical due to the lack of predictive guidelines bridging thermodynamics, kinetics, and synthesis conditions. Here, we show that precursor chemistry can control metastable polymorph selection by modulating the reaction driving force governing nucleation. By integrating first-principles reaction energetics and substrate interactions into classical nucleation theory, we establish a quantitative framework that connects precursor-dependent reaction energetics to polymorph accessibility during vapor deposition. Using Ga2O3 as a model system, we demonstrate that highly reactive precursors with large reaction driving forces kinetically stabilize the metastable α phase, whereas low-driving-force precursors permit thermodynamic relaxation to the stable \b{eta} phase. Furthermore, precursor flow rates amplify supersaturation, expanding the kinetic window for stabilizing the elusive \k{appa} phase. The predictive capability of this approach is further validated in the TiO2 system, where precursor-dependent reaction energetics correctly capture the competitive nucleation between rutile and anatase. These results establish precursor chemistry as a tunable chemical lever for controlling nucleation kinetics and provide a predictive design principle for metastable polymorph synthesis in vapor deposition.
format Preprint
id arxiv_https___arxiv_org_abs_2603_02466
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Precursor-Dependent Energetics as a Predictive Principle for Polymorph Selection in Thin Films
Kim, Hyeon Woo
Lee, Han Uk
Mishra, Rohan
Cho, Sung Beom
Materials Science
Vapor deposition allows for the synthesis of metastable polymorphs with unique properties, yet polymorph selection remains largely empirical due to the lack of predictive guidelines bridging thermodynamics, kinetics, and synthesis conditions. Here, we show that precursor chemistry can control metastable polymorph selection by modulating the reaction driving force governing nucleation. By integrating first-principles reaction energetics and substrate interactions into classical nucleation theory, we establish a quantitative framework that connects precursor-dependent reaction energetics to polymorph accessibility during vapor deposition. Using Ga2O3 as a model system, we demonstrate that highly reactive precursors with large reaction driving forces kinetically stabilize the metastable α phase, whereas low-driving-force precursors permit thermodynamic relaxation to the stable \b{eta} phase. Furthermore, precursor flow rates amplify supersaturation, expanding the kinetic window for stabilizing the elusive \k{appa} phase. The predictive capability of this approach is further validated in the TiO2 system, where precursor-dependent reaction energetics correctly capture the competitive nucleation between rutile and anatase. These results establish precursor chemistry as a tunable chemical lever for controlling nucleation kinetics and provide a predictive design principle for metastable polymorph synthesis in vapor deposition.
title Precursor-Dependent Energetics as a Predictive Principle for Polymorph Selection in Thin Films
topic Materials Science
url https://arxiv.org/abs/2603.02466