Room-temperature magnetic p-n junctions for charge-and-spin diodes
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866914364826583040 |
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| author | Jiao, Yuzhang Wang, Yutong Du, Xiangning Ba, You Zhang, Yingqi Tang, Zhiwei Wang, Xiangrong Chai, Tiantian Mu, Xiaoke Song, Cheng Yao, Kefu Zhang, Zhengjun Zhao, Yonggang Chen, Na |
| author_facet | Jiao, Yuzhang Wang, Yutong Du, Xiangning Ba, You Zhang, Yingqi Tang, Zhiwei Wang, Xiangrong Chai, Tiantian Mu, Xiaoke Song, Cheng Yao, Kefu Zhang, Zhengjun Zhao, Yonggang Chen, Na |
| contents | Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive latency, and high-power consumption in Si-based electronics, we develop magnetic p-n junctions composed of a p-type amorphous magnetic semiconductor (p-AMS) and n-type Si. These charge-and-spin junctions exhibit typical diode characteristics for charge current, along with distinctive spin diode features. By manipulating spin-polarized space charges, we observed a giant magnetic enhancement of approximately 24.36% at a breakdown current of 5 mA, and an impressive 29-fold increase in magnetic moments for p-AMS. The observed spin behavior is attributed to space charge effects or carrier depletion in the p-AMS with extended hole states. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_02506 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Room-temperature magnetic p-n junctions for charge-and-spin diodes Jiao, Yuzhang Wang, Yutong Du, Xiangning Ba, You Zhang, Yingqi Tang, Zhiwei Wang, Xiangrong Chai, Tiantian Mu, Xiaoke Song, Cheng Yao, Kefu Zhang, Zhengjun Zhao, Yonggang Chen, Na Materials Science Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive latency, and high-power consumption in Si-based electronics, we develop magnetic p-n junctions composed of a p-type amorphous magnetic semiconductor (p-AMS) and n-type Si. These charge-and-spin junctions exhibit typical diode characteristics for charge current, along with distinctive spin diode features. By manipulating spin-polarized space charges, we observed a giant magnetic enhancement of approximately 24.36% at a breakdown current of 5 mA, and an impressive 29-fold increase in magnetic moments for p-AMS. The observed spin behavior is attributed to space charge effects or carrier depletion in the p-AMS with extended hole states. |
| title | Room-temperature magnetic p-n junctions for charge-and-spin diodes |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.02506 |