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Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation

Fuente: arXiv

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Bibliographic Details
Main Authors:	Shamim, Aaquib, Liles, Scott D., Hillier, Joe, Huang, Jonathan Y., Vorreiter, Isaac, Chowdhury, Pratik, Escott, Chris C., Hudson, Fay E., Lim, Wee Han, Chan, Kok Wai, Rahman, Rajib, Dzurak, Andrew S., Hamilton, Alexander R.
Format:	Preprint
Published:	2026
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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