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Demonstration of robust chiral edge transport in Chern insulator MnBi2Te4 devices with engineered geometric defects

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Wang, Pinyuan, Ge, Jun, Luo, Jiawei, Liu, Xiaoqi, Fei, Fucong, Song, Fengqi, Wang, Jian
Formato:	Preprint
Publicado:	2026
Materias:	Mesoscale and Nanoscale Physics Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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