Interfering trajectories in a ballistic Andreev cavity

Fuente: arXiv
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Autori principali: Mandal, Pankaj, Kaschper, Marcel, Dominguez, Fernando, Mondal, Soumi, Lunczer, Lukas, Chen, Dongyun, Stehno, Martin P., Hankiewicz, Ewelina M., Trauzettel, Björn, Klapwijk, Teun M., Gould, Charles, Molenkamp, Laurens W.
Natura: Preprint
Pubblicazione: 2026
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author Mandal, Pankaj
Kaschper, Marcel
Dominguez, Fernando
Mondal, Soumi
Lunczer, Lukas
Chen, Dongyun
Stehno, Martin P.
Hankiewicz, Ewelina M.
Trauzettel, Björn
Klapwijk, Teun M.
Gould, Charles
Molenkamp, Laurens W.
author_facet Mandal, Pankaj
Kaschper, Marcel
Dominguez, Fernando
Mondal, Soumi
Lunczer, Lukas
Chen, Dongyun
Stehno, Martin P.
Hankiewicz, Ewelina M.
Trauzettel, Björn
Klapwijk, Teun M.
Gould, Charles
Molenkamp, Laurens W.
contents The conventional description of transport through the interface between a normal conductor and a superconductor reduces the system to a one-dimensional problem treating Andreev reflection based on a zero-dimensional Sharvin type point-contact model, and effectively neglects all considerations of device geometry. While this has been successful in systems where conductance in the normal material is in the diffusive transport regime, such an over-simplification of the problem fails in other transport regimes. In particular, when transport is ballistic as in a typical semiconductor-superconductor hybrid structure, geometrical effects are inherently important, and a proper description must consider a one-dimension contact injecting into a two-dimensional ballistic cavity. We present the first study of this regime and explore the bias-voltage dependence of Andreev transport in a cavity-type device comprised of a high mobility HgTe quantum well side-contacted by one superconducting and one normal contact, each creating a one-dimensional interface. The enhanced conductance from Andreev transport features two finite bias conductance peaks, observed at energies within the energy gap of the superconductor. Interestingly, these two peaks respond differently to the application of a perpendicular-to-plane magnetic field. Using a semi-classical model for the quantum transport within the cavity, we are able to attribute each peak to a different class of ballistic trajectories. One class is dominated by normal reflection, and its interference condition is independent of magnetic field, whereas the other one contains retro-reflected Andreev processes at the superconductor interface. These create closed trajectories that are strongly suppressed by magnetic field due to Aharonov-Bohm and Doppler shift effects.
format Preprint
id arxiv_https___arxiv_org_abs_2603_04046
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Interfering trajectories in a ballistic Andreev cavity
Mandal, Pankaj
Kaschper, Marcel
Dominguez, Fernando
Mondal, Soumi
Lunczer, Lukas
Chen, Dongyun
Stehno, Martin P.
Hankiewicz, Ewelina M.
Trauzettel, Björn
Klapwijk, Teun M.
Gould, Charles
Molenkamp, Laurens W.
Mesoscale and Nanoscale Physics
The conventional description of transport through the interface between a normal conductor and a superconductor reduces the system to a one-dimensional problem treating Andreev reflection based on a zero-dimensional Sharvin type point-contact model, and effectively neglects all considerations of device geometry. While this has been successful in systems where conductance in the normal material is in the diffusive transport regime, such an over-simplification of the problem fails in other transport regimes. In particular, when transport is ballistic as in a typical semiconductor-superconductor hybrid structure, geometrical effects are inherently important, and a proper description must consider a one-dimension contact injecting into a two-dimensional ballistic cavity. We present the first study of this regime and explore the bias-voltage dependence of Andreev transport in a cavity-type device comprised of a high mobility HgTe quantum well side-contacted by one superconducting and one normal contact, each creating a one-dimensional interface. The enhanced conductance from Andreev transport features two finite bias conductance peaks, observed at energies within the energy gap of the superconductor. Interestingly, these two peaks respond differently to the application of a perpendicular-to-plane magnetic field. Using a semi-classical model for the quantum transport within the cavity, we are able to attribute each peak to a different class of ballistic trajectories. One class is dominated by normal reflection, and its interference condition is independent of magnetic field, whereas the other one contains retro-reflected Andreev processes at the superconductor interface. These create closed trajectories that are strongly suppressed by magnetic field due to Aharonov-Bohm and Doppler shift effects.
title Interfering trajectories in a ballistic Andreev cavity
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.04046