Dissipation-Reliability Tradeoff for Stochastic CMOS Bits in Series

Fuente: arXiv
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Auteurs principaux: Murphy, Cathryn, Nicholson, Schuyler, Freitas, Nahuel, Penocchio, Emanuele, Gingrich, Todd
Format: Preprint
Publié: 2026
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author Murphy, Cathryn
Nicholson, Schuyler
Freitas, Nahuel
Penocchio, Emanuele
Gingrich, Todd
author_facet Murphy, Cathryn
Nicholson, Schuyler
Freitas, Nahuel
Penocchio, Emanuele
Gingrich, Todd
contents Physical instantiations of a bit of information are subject to thermal noise that can trigger unintended bit-flip errors. Bits implemented with CMOS technology typically operate in regimes that reliably suppress these errors with a large bias voltage, but miniaturization and circuit design for implantable biomedical devices motivate error suppression via alternative low-voltage strategies. We present and analyze an error-suppression technique that involves coupling multiple CMOS units into chains, introducing a natural error correction arising from inter-unit correlations. Using tensor networks to numerically solve a stochastic master equation for the CMOS chain, we quantify the reliability-dissipation tradeoff across system sizes that would be intractable with conventional sparse-matrix methods. The calculations show that the typical time for bit-flip errors scales exponentially with the bias voltage but subexponentially with the chain length. While a CMOS chain adds stability compared to a single CMOS unit for a fixed low bias voltage, increasing the bias voltage is a lower-dissipation route to equivalent stability.
format Preprint
id arxiv_https___arxiv_org_abs_2603_04658
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Dissipation-Reliability Tradeoff for Stochastic CMOS Bits in Series
Murphy, Cathryn
Nicholson, Schuyler
Freitas, Nahuel
Penocchio, Emanuele
Gingrich, Todd
Statistical Mechanics
Physical instantiations of a bit of information are subject to thermal noise that can trigger unintended bit-flip errors. Bits implemented with CMOS technology typically operate in regimes that reliably suppress these errors with a large bias voltage, but miniaturization and circuit design for implantable biomedical devices motivate error suppression via alternative low-voltage strategies. We present and analyze an error-suppression technique that involves coupling multiple CMOS units into chains, introducing a natural error correction arising from inter-unit correlations. Using tensor networks to numerically solve a stochastic master equation for the CMOS chain, we quantify the reliability-dissipation tradeoff across system sizes that would be intractable with conventional sparse-matrix methods. The calculations show that the typical time for bit-flip errors scales exponentially with the bias voltage but subexponentially with the chain length. While a CMOS chain adds stability compared to a single CMOS unit for a fixed low bias voltage, increasing the bias voltage is a lower-dissipation route to equivalent stability.
title Dissipation-Reliability Tradeoff for Stochastic CMOS Bits in Series
topic Statistical Mechanics
url https://arxiv.org/abs/2603.04658