Topological Surface Charge Detection via Active Capacitive Compensation: A Pathway to the 4D Quantum Hall Effect
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
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2026
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| _version_ | 1866915837054550016 |
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| author | Li, Yuanze Wang, Renfei Zhang, Yifan Chen, Jiahao Deng, Yingdong Xie, Jin Kou, Xufeng Liu, Yang Liang, Tian |
| author_facet | Li, Yuanze Wang, Renfei Zhang, Yifan Chen, Jiahao Deng, Yingdong Xie, Jin Kou, Xufeng Liu, Yang Liang, Tian |
| contents | The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $ΔP = \frac{e^2}{2h} N_{\rm Ch}^{(2)} ΔB$, serves as a condensed-matter realization of the four-dimensional quantum Hall effect (4D QHE). In dual-gate axion-insulator devices, the TME-induced polarization yields a current $I_{\rm TME} \propto (C_{\rm total}/C_{\rm S})\,Q_{\rm 4D\text{-}QHE}$, where the signal is suppressed by the capacitance ratio $C_{\rm total}/C_{\rm S}$. Here we propose an active compensation scheme that introduces a tunable negative capacitance $C_{\rm comp} \approx -C_{\rm gate}$ into the gate line, effectively canceling the gate dielectric capacitance and driving $C_{\rm total}/C_{\rm S} \to 1$. We validate the method using a quantum anomalous Hall (QAH) device, which shares the same surface-state physics with the axion insulator but permits direct charge measurement via a single gate, recovering over $95\%$ of the quantized charge signal from an initially half-attenuated state. This compensation method provides a robust means of resolving minute TME signals, offering a promising pathway toward direct measurements of the 4D QHE. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_05025 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Topological Surface Charge Detection via Active Capacitive Compensation: A Pathway to the 4D Quantum Hall Effect Li, Yuanze Wang, Renfei Zhang, Yifan Chen, Jiahao Deng, Yingdong Xie, Jin Kou, Xufeng Liu, Yang Liang, Tian Mesoscale and Nanoscale Physics The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $ΔP = \frac{e^2}{2h} N_{\rm Ch}^{(2)} ΔB$, serves as a condensed-matter realization of the four-dimensional quantum Hall effect (4D QHE). In dual-gate axion-insulator devices, the TME-induced polarization yields a current $I_{\rm TME} \propto (C_{\rm total}/C_{\rm S})\,Q_{\rm 4D\text{-}QHE}$, where the signal is suppressed by the capacitance ratio $C_{\rm total}/C_{\rm S}$. Here we propose an active compensation scheme that introduces a tunable negative capacitance $C_{\rm comp} \approx -C_{\rm gate}$ into the gate line, effectively canceling the gate dielectric capacitance and driving $C_{\rm total}/C_{\rm S} \to 1$. We validate the method using a quantum anomalous Hall (QAH) device, which shares the same surface-state physics with the axion insulator but permits direct charge measurement via a single gate, recovering over $95\%$ of the quantized charge signal from an initially half-attenuated state. This compensation method provides a robust means of resolving minute TME signals, offering a promising pathway toward direct measurements of the 4D QHE. |
| title | Topological Surface Charge Detection via Active Capacitive Compensation: A Pathway to the 4D Quantum Hall Effect |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.05025 |