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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2603.05770 |
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| _version_ | 1866915838564499456 |
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| author | Steinebronn, Emma Islam, Saurav Chatterjee, Abhinava Neupane, Bimal Grutter, Alex Jensen, Christopher Borchers, Julie A. Charlton, Timothy Yanez-Parreno, Wilson J. Chamorro, Juan Berry, Tanya Ghosh, Supriya Nivedith, K. A. Mkhoyan, K. Andre McQueen, Tyrel Wang, Yuanxi Liu, Chaoxing Samarth, Nitin |
| author_facet | Steinebronn, Emma Islam, Saurav Chatterjee, Abhinava Neupane, Bimal Grutter, Alex Jensen, Christopher Borchers, Julie A. Charlton, Timothy Yanez-Parreno, Wilson J. Chamorro, Juan Berry, Tanya Ghosh, Supriya Nivedith, K. A. Mkhoyan, K. Andre McQueen, Tyrel Wang, Yuanxi Liu, Chaoxing Samarth, Nitin |
| contents | We use molecular beam epitaxy to develop a gate tunable p-n heterojunction that interfaces a canonical Dirac semimetal, Cd$_3$As$_2$, and a ferromagnetic semiconductor, In$_{1-x}$Mn$_x$As, with perpendicular magnetic anisotropy. Measurements of the anomalous Hall effect in top-gated Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As devices show that the ferromagnetic Curie temperature ($T_\mathrm{C}$) can be efficiently tuned using a modest gate voltage of $\sim 10$ V, corresponding to a sensitivity to electric field ($E$) of $ΔT_{\mathrm{C}}/ΔE \sim 10$ K/MV/cm). The voltage tuning of $T_\mathrm{C}$ saturates near the charge neutrality point of Cd$_3$As$_2$ and vanishes at positive gate voltage in appropriately designed heterostructures. This non-monotonic behavior cannot be explained solely by hole-mediated ferromagnetism in the In$_{1-x}$Mn$_x$As alone, suggesting an interaction between the Dirac semimetal and the ferromagnetic semiconductor. Our results identify Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As heterojunctions as a potentially attractive platform for studying emergent phenomena arising from the interplay between broken symmetry, topology, and magnetism in a topological semimetal. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_05770 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Efficiently gate-tunable ferromagnetism in ferromagnetic semiconductor-Dirac semimetal p-n heterojunctions Steinebronn, Emma Islam, Saurav Chatterjee, Abhinava Neupane, Bimal Grutter, Alex Jensen, Christopher Borchers, Julie A. Charlton, Timothy Yanez-Parreno, Wilson J. Chamorro, Juan Berry, Tanya Ghosh, Supriya Nivedith, K. A. Mkhoyan, K. Andre McQueen, Tyrel Wang, Yuanxi Liu, Chaoxing Samarth, Nitin Mesoscale and Nanoscale Physics We use molecular beam epitaxy to develop a gate tunable p-n heterojunction that interfaces a canonical Dirac semimetal, Cd$_3$As$_2$, and a ferromagnetic semiconductor, In$_{1-x}$Mn$_x$As, with perpendicular magnetic anisotropy. Measurements of the anomalous Hall effect in top-gated Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As devices show that the ferromagnetic Curie temperature ($T_\mathrm{C}$) can be efficiently tuned using a modest gate voltage of $\sim 10$ V, corresponding to a sensitivity to electric field ($E$) of $ΔT_{\mathrm{C}}/ΔE \sim 10$ K/MV/cm). The voltage tuning of $T_\mathrm{C}$ saturates near the charge neutrality point of Cd$_3$As$_2$ and vanishes at positive gate voltage in appropriately designed heterostructures. This non-monotonic behavior cannot be explained solely by hole-mediated ferromagnetism in the In$_{1-x}$Mn$_x$As alone, suggesting an interaction between the Dirac semimetal and the ferromagnetic semiconductor. Our results identify Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As heterojunctions as a potentially attractive platform for studying emergent phenomena arising from the interplay between broken symmetry, topology, and magnetism in a topological semimetal. |
| title | Efficiently gate-tunable ferromagnetism in ferromagnetic semiconductor-Dirac semimetal p-n heterojunctions |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.05770 |