Twist-Controlled Modulation of Quantum Emitters in a Van der Waals Bilayer
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2026
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866917317614501888 |
|---|---|
| author | Gale, Angus Lee, Seungjun Park, Seungmin Williams, Evan Zeng, Helen Zhi Jie Liddle-Wesolowski, James Kim, Young Duck Toth, Milos Low, Tony Aharonovich, Igor |
| author_facet | Gale, Angus Lee, Seungjun Park, Seungmin Williams, Evan Zeng, Helen Zhi Jie Liddle-Wesolowski, James Kim, Young Duck Toth, Milos Low, Tony Aharonovich, Igor |
| contents | Stacking and twisting two dimensional materials has garnered enormous attention across the condensed matter and the nanophotonic communities. The surge of interest stems from the emergence of novel photophysical phenomena that arise due to the interlayer coupling of the individual layers. Here, we demonstrate that the twist degree of freedom can modulate a single quantum emitter at room temperature. We employ a van der Waals homobilayer of hexagonal boron nitride (hBN) and model the emission properties of quantum emitters as a function of the twist angle. Density functional theory results show that the embedded emitters are strongly influenced by the twist angle and the stacking of the top hBN layer. We consequently engineer these systems experimentally, and demonstrate in-situ tuning of embedded quantum emitters by mechanically twisting the top hBN layer, achieving tunability of over 30 nm (~ 100 meV). Our work demonstrates that mechanical twisting can be harnessed to modulate the embedded quantum emitters in a vdW material, marking a crucial step towards a programmable on-chip quantum circuitry. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_05856 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Twist-Controlled Modulation of Quantum Emitters in a Van der Waals Bilayer Gale, Angus Lee, Seungjun Park, Seungmin Williams, Evan Zeng, Helen Zhi Jie Liddle-Wesolowski, James Kim, Young Duck Toth, Milos Low, Tony Aharonovich, Igor Materials Science Stacking and twisting two dimensional materials has garnered enormous attention across the condensed matter and the nanophotonic communities. The surge of interest stems from the emergence of novel photophysical phenomena that arise due to the interlayer coupling of the individual layers. Here, we demonstrate that the twist degree of freedom can modulate a single quantum emitter at room temperature. We employ a van der Waals homobilayer of hexagonal boron nitride (hBN) and model the emission properties of quantum emitters as a function of the twist angle. Density functional theory results show that the embedded emitters are strongly influenced by the twist angle and the stacking of the top hBN layer. We consequently engineer these systems experimentally, and demonstrate in-situ tuning of embedded quantum emitters by mechanically twisting the top hBN layer, achieving tunability of over 30 nm (~ 100 meV). Our work demonstrates that mechanical twisting can be harnessed to modulate the embedded quantum emitters in a vdW material, marking a crucial step towards a programmable on-chip quantum circuitry. |
| title | Twist-Controlled Modulation of Quantum Emitters in a Van der Waals Bilayer |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.05856 |