Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866911514355564544 |
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| author | Park, Yungyeong Park, Yosep Choi, Hyeonseok Lim, Subeen Kim, Dongwook Lee, Yeonghun |
| author_facet | Park, Yungyeong Park, Yosep Choi, Hyeonseok Lim, Subeen Kim, Dongwook Lee, Yeonghun |
| contents | Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This paper presents a device modeling based on the tight-binding model and the nonequilibrium Green's function formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable a direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_06021 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition Park, Yungyeong Park, Yosep Choi, Hyeonseok Lim, Subeen Kim, Dongwook Lee, Yeonghun Mesoscale and Nanoscale Physics Applied Physics Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This paper presents a device modeling based on the tight-binding model and the nonequilibrium Green's function formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable a direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition. |
| title | Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2603.06021 |