Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Fuente: arXiv

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Bibliographic Details
Main Authors:	Park, Yungyeong, Park, Yosep, Choi, Hyeonseok, Lim, Subeen, Kim, Dongwook, Lee, Yeonghun
Format:	Preprint
Published:	2026
Subjects:	Mesoscale and Nanoscale Physics Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2603.06021