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Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Park, Yungyeong, Park, Yosep, Choi, Hyeonseok, Lim, Subeen, Kim, Dongwook, Lee, Yeonghun
Natura:	Preprint
Pubblicazione:	2026
Soggetti:	Mesoscale and Nanoscale Physics Applied Physics
Accesso online:	Acceder al recurso
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