Trap-Enhanced Steep-Slope Negative-Capacitance FETs Using Amorphous Oxide Semiconductors

Fuente: arXiv

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Bibliographic Details
Main Authors:	Park, Yungyeong, Lee, Hakseon, Lee, Yeonghun
Format:	Preprint
Published:	2026
Subjects:	Other Condensed Matter Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2603.06161