Adsorption-Controlled Epitaxy and Twin Control of $γ$-GaSe on GaAs (111)B
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866908871407173632 |
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| author | Eickhoff, Joshua Sarney, Wendy L. Najmaei, Sina Rhodes, Daniel A. Kawasaki, Jason |
| author_facet | Eickhoff, Joshua Sarney, Wendy L. Najmaei, Sina Rhodes, Daniel A. Kawasaki, Jason |
| contents | The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der Waals surfaces, and ability to alloy and synthesize heterostructures for bandgap engineering. Adsorption control is a widely utilized strategy for controlling the stoichiometry and phase formation of these materials; however, the bounds of the adsorption-controlled growth window for GaSe have not been systematically established. Additionally, challenges with control over polytype and twinning remain. Here, we use molecular beam epitaxy to experimentally map the adsorption-controlled growth window of GaSe films on vicinal GaAs (111)B substrates. The observed phase boundaries show qualitative agreement with Ellingham diagram predictions. All films crystallize in the $γ$ ($R3m$) polytype. Increasing growth and annealing temperature leads to decreased mosaicity measured by x-ray rocking curve and smoother surfaces measured by atomic force microscopy, at the expense of a transition from singly oriented $γ$ to twinned $γ$ with $60\degree$ rotated domains. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2603_06845 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Adsorption-Controlled Epitaxy and Twin Control of $γ$-GaSe on GaAs (111)B Eickhoff, Joshua Sarney, Wendy L. Najmaei, Sina Rhodes, Daniel A. Kawasaki, Jason Materials Science The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der Waals surfaces, and ability to alloy and synthesize heterostructures for bandgap engineering. Adsorption control is a widely utilized strategy for controlling the stoichiometry and phase formation of these materials; however, the bounds of the adsorption-controlled growth window for GaSe have not been systematically established. Additionally, challenges with control over polytype and twinning remain. Here, we use molecular beam epitaxy to experimentally map the adsorption-controlled growth window of GaSe films on vicinal GaAs (111)B substrates. The observed phase boundaries show qualitative agreement with Ellingham diagram predictions. All films crystallize in the $γ$ ($R3m$) polytype. Increasing growth and annealing temperature leads to decreased mosaicity measured by x-ray rocking curve and smoother surfaces measured by atomic force microscopy, at the expense of a transition from singly oriented $γ$ to twinned $γ$ with $60\degree$ rotated domains. |
| title | Adsorption-Controlled Epitaxy and Twin Control of $γ$-GaSe on GaAs (111)B |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.06845 |