Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866918387633881088 |
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| author | Park, Yosep Park, Yungyeong Choi, Hyeonseok Lim, Subeen Lee, Yeonghun |
| author_facet | Park, Yosep Park, Yungyeong Choi, Hyeonseok Lim, Subeen Lee, Yeonghun |
| contents | Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here, we theoretically propose extremely low-power cryogenic topological transistors, i.e., negative-capacitance topological insulator field-effect transistors (NC-TIFETs). By combining a gate-field-induced two-dimensional 1T'-Molybdenum Disulfide (MoS$_2$) topological channel with a hafnium-zirconium oxide (HZO) ferroelectric gate insulator, NC-TIFETs exhibit an extremely steep-slope transfer curve and ultra-high transconductance at low drain voltage ($V_{\mathrm{D}}$). Therefore, NC-TIFETs are the compelling candidate for minimizing power dissipation in the cryogenic electronic interfaces essential for large-scale quantum computing systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_07902 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications Park, Yosep Park, Yungyeong Choi, Hyeonseok Lim, Subeen Lee, Yeonghun Mesoscale and Nanoscale Physics Applied Physics Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here, we theoretically propose extremely low-power cryogenic topological transistors, i.e., negative-capacitance topological insulator field-effect transistors (NC-TIFETs). By combining a gate-field-induced two-dimensional 1T'-Molybdenum Disulfide (MoS$_2$) topological channel with a hafnium-zirconium oxide (HZO) ferroelectric gate insulator, NC-TIFETs exhibit an extremely steep-slope transfer curve and ultra-high transconductance at low drain voltage ($V_{\mathrm{D}}$). Therefore, NC-TIFETs are the compelling candidate for minimizing power dissipation in the cryogenic electronic interfaces essential for large-scale quantum computing systems. |
| title | Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2603.07902 |