All-in-plane image sensors free from readout integrated circuits

Fuente: arXiv
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Hauptverfasser: Kapralov, Kirill, Mazurenko, Ilya, Tarkaeva, Elizaveta, Semkin, Valentin, Kononenko, Oleg, Knyazev, Maxim, Matveev, Viktor, Kashchenko, Mikhail, Morozov, Alexander, Domaratsky, Ivan, Kaydashev, Vladimir, Litun, Yana, Kuntsevich, Aleksandr, Bocharov, Alexey, Svintsov, Dmitry
Format: Preprint
Veröffentlicht: 2026
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author Kapralov, Kirill
Mazurenko, Ilya
Tarkaeva, Elizaveta
Semkin, Valentin
Kononenko, Oleg
Knyazev, Maxim
Matveev, Viktor
Kashchenko, Mikhail
Morozov, Alexander
Domaratsky, Ivan
Kaydashev, Vladimir
Litun, Yana
Kuntsevich, Aleksandr
Bocharov, Alexey
Svintsov, Dmitry
author_facet Kapralov, Kirill
Mazurenko, Ilya
Tarkaeva, Elizaveta
Semkin, Valentin
Kononenko, Oleg
Knyazev, Maxim
Matveev, Viktor
Kashchenko, Mikhail
Morozov, Alexander
Domaratsky, Ivan
Kaydashev, Vladimir
Litun, Yana
Kuntsevich, Aleksandr
Bocharov, Alexey
Svintsov, Dmitry
contents High resolution image sensors require electrical access to each individual pixel for signal readout. Such access is especially challenging for ultra-miniaturized pixels, for heterogeneously integrated sensing and readout layers in long-wavelength detectors, and for novel light-sensing materials with unestablished integration to silicon chips. Here, we introduce and experimentally validate a novel imaging approach that does not require electrical connections to individual pixels. The sensor matrix involves photoresistive pixels connected neighbor-to-neighbor and packed into a rectangular lattice. The signal readout is based on electrical impedance tomography applied to the photoresistance: the photovoltage is measured at the matrix boundary at various positions of injected bias current, and the image is reconstructed algorithmically. We present experimental validations for moderate-size infrared imagers based on multilayer graphene (24 pixels) and amorphous vanadium oxide (264 pixels). The reconstruction procedure is mathematically stable, sustainable to variations of pixel resistivity and photosensitivity, and its complexity is that of linear system solution. The proposed method enables unprecedented architecture simplification of imaging devices.
format Preprint
id arxiv_https___arxiv_org_abs_2603_08178
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle All-in-plane image sensors free from readout integrated circuits
Kapralov, Kirill
Mazurenko, Ilya
Tarkaeva, Elizaveta
Semkin, Valentin
Kononenko, Oleg
Knyazev, Maxim
Matveev, Viktor
Kashchenko, Mikhail
Morozov, Alexander
Domaratsky, Ivan
Kaydashev, Vladimir
Litun, Yana
Kuntsevich, Aleksandr
Bocharov, Alexey
Svintsov, Dmitry
Mesoscale and Nanoscale Physics
High resolution image sensors require electrical access to each individual pixel for signal readout. Such access is especially challenging for ultra-miniaturized pixels, for heterogeneously integrated sensing and readout layers in long-wavelength detectors, and for novel light-sensing materials with unestablished integration to silicon chips. Here, we introduce and experimentally validate a novel imaging approach that does not require electrical connections to individual pixels. The sensor matrix involves photoresistive pixels connected neighbor-to-neighbor and packed into a rectangular lattice. The signal readout is based on electrical impedance tomography applied to the photoresistance: the photovoltage is measured at the matrix boundary at various positions of injected bias current, and the image is reconstructed algorithmically. We present experimental validations for moderate-size infrared imagers based on multilayer graphene (24 pixels) and amorphous vanadium oxide (264 pixels). The reconstruction procedure is mathematically stable, sustainable to variations of pixel resistivity and photosensitivity, and its complexity is that of linear system solution. The proposed method enables unprecedented architecture simplification of imaging devices.
title All-in-plane image sensors free from readout integrated circuits
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.08178