Strain-driven magnetic anisotropy and spin reorientation in epitaxial Co V 2 O 4 spinel oxide thin films
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| Format: | Preprint |
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2026
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| author | Khabchi, Lamiae El Schlur, Laurent Robert, Jérôme Lenertz, Marc Leuvrey, Cédric Versini, Gilles Roulland, François Chahine, Gilbert Blanc, Nils Preziosi, Daniele Lefèvre, Christophe Viart, Nathalie |
| author_facet | Khabchi, Lamiae El Schlur, Laurent Robert, Jérôme Lenertz, Marc Leuvrey, Cédric Versini, Gilles Roulland, François Chahine, Gilbert Blanc, Nils Preziosi, Daniele Lefèvre, Christophe Viart, Nathalie |
| contents | CoV___O___ (CVO) stands out among spinel vanadates for its ultra-short V-V distances, placing it at the brink of itinerant electron behaviour-an ideal playground for strain engineering. In this work, we exploit this sensitivity by growing high-quality epitaxial CVO thin films on SrTiO___ (001) and MgO (001), inducing compressive and tensile strain, respectively. Using pulsed laser deposition under ultra-low oxygen pressure, we achieve high crystalline quality and straincontrolled tetragonal distortions: c > a under compression (STO) and c < a under tension (MgO). Resonant elastic X-ray scattering confirms a normal spinel structure, with cobalt occupying tetrahedral sites and vanadium octahedral ones. Both strain types reduce charge transport, driving the system into a highly resistive state. Magnetic measurements reveal strain-driven anisotropy switching: STO films transition from out-of-plane to in-plane easy axis below 90 K, while MgO films flip from in-plane to out-of-plane below 45 K. These results highlight CVO's exceptional responsiveness to lattice strain, unlocking a path to finely tunable electronic and magnetic properties. With its strong spin-lattice coupling and potential in spin Hall magnetoresistance, strained CVO emerges as a compelling platform for next-generation lowpower spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_08187 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Strain-driven magnetic anisotropy and spin reorientation in epitaxial Co V 2 O 4 spinel oxide thin films Khabchi, Lamiae El Schlur, Laurent Robert, Jérôme Lenertz, Marc Leuvrey, Cédric Versini, Gilles Roulland, François Chahine, Gilbert Blanc, Nils Preziosi, Daniele Lefèvre, Christophe Viart, Nathalie Materials Science CoV___O___ (CVO) stands out among spinel vanadates for its ultra-short V-V distances, placing it at the brink of itinerant electron behaviour-an ideal playground for strain engineering. In this work, we exploit this sensitivity by growing high-quality epitaxial CVO thin films on SrTiO___ (001) and MgO (001), inducing compressive and tensile strain, respectively. Using pulsed laser deposition under ultra-low oxygen pressure, we achieve high crystalline quality and straincontrolled tetragonal distortions: c > a under compression (STO) and c < a under tension (MgO). Resonant elastic X-ray scattering confirms a normal spinel structure, with cobalt occupying tetrahedral sites and vanadium octahedral ones. Both strain types reduce charge transport, driving the system into a highly resistive state. Magnetic measurements reveal strain-driven anisotropy switching: STO films transition from out-of-plane to in-plane easy axis below 90 K, while MgO films flip from in-plane to out-of-plane below 45 K. These results highlight CVO's exceptional responsiveness to lattice strain, unlocking a path to finely tunable electronic and magnetic properties. With its strong spin-lattice coupling and potential in spin Hall magnetoresistance, strained CVO emerges as a compelling platform for next-generation lowpower spintronic devices. |
| title | Strain-driven magnetic anisotropy and spin reorientation in epitaxial Co V 2 O 4 spinel oxide thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.08187 |