Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Zandipour, Hossein, Kaps, Felix, Buschbeck, Robin, Obst, Maximilian, Senarath, Aditha, Niemann, Richarda, Mueller, Niclas S., Alvarez-Perez, Gonzalo, Diaz-Granados, Katja, Kowalski, Ryan A, Wetzel, Jakob, Iyer, Raghunandan Balasubramanyam, Wortel, Matthew, Klopf, J. Michael, Anderson, Travis, Jacobs, Alan, Ebrish, Mona, Eng, Lukas M., Paarman, Alexander, Kehr, Susanne C., Caldwell, Joshua D., Folland, Thomas G.
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2603.08858