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Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Zandipour, Hossein, Kaps, Felix, Buschbeck, Robin, Obst, Maximilian, Senarath, Aditha, Niemann, Richarda, Mueller, Niclas S., Alvarez-Perez, Gonzalo, Diaz-Granados, Katja, Kowalski, Ryan A, Wetzel, Jakob, Iyer, Raghunandan Balasubramanyam, Wortel, Matthew, Klopf, J. Michael, Anderson, Travis, Jacobs, Alan, Ebrish, Mona, Eng, Lukas M., Paarman, Alexander, Kehr, Susanne C., Caldwell, Joshua D., Folland, Thomas G.
Format:	Preprint
Publié:	2026
Sujets:	Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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