Gate-tunable anisotropic Josephson diode effect in topological Dirac semimetal Cd$_3$As$_2$ nanowires

Fuente: arXiv
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Auteurs principaux: Hou, Yan-Liang, Wang, An-Qi, Li, Na, Chu, Chun-Guang, Brinkman, Alexander, Liao, Zhi-Min, Li, Chuan
Format: Preprint
Publié: 2026
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author Hou, Yan-Liang
Wang, An-Qi
Li, Na
Chu, Chun-Guang
Brinkman, Alexander
Liao, Zhi-Min
Li, Chuan
author_facet Hou, Yan-Liang
Wang, An-Qi
Li, Na
Chu, Chun-Guang
Brinkman, Alexander
Liao, Zhi-Min
Li, Chuan
contents The intrinsic Josephson diode effect (JDE) has recently attracted considerable attention due to its sensitivity to broken symmetries in Josephson junctions, offering a powerful probe for uncovering hidden symmetry-breaking mechanisms in materials. The presence of higher-harmonic components in the current-phase relation, together with spin-orbital coupling, makes topological materials ideal platforms to explore this effect. In this work, we present a systematic study of the JDE in type-I topological Dirac semimetal Cd$_3$As$_2$ nanowire-based Josephson junctions. We observe a pronounced gate-tunable and highly anisotropic diode response under different magnetic-field orientations. By developing a comprehensive phenomenological model, we capture the angular dependence of the diode effect and, through temperature-dependent measurements, disentangle the respective contributions from bulk and topological surface states. Notably, anomalies in the temperature dependence of the diode efficiency reveal the coexistence of multiple transport channels, highlighting the Josephson diode effect as a sensitive probe of hidden topological superconducting states.
format Preprint
id arxiv_https___arxiv_org_abs_2603_09676
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Gate-tunable anisotropic Josephson diode effect in topological Dirac semimetal Cd$_3$As$_2$ nanowires
Hou, Yan-Liang
Wang, An-Qi
Li, Na
Chu, Chun-Guang
Brinkman, Alexander
Liao, Zhi-Min
Li, Chuan
Mesoscale and Nanoscale Physics
The intrinsic Josephson diode effect (JDE) has recently attracted considerable attention due to its sensitivity to broken symmetries in Josephson junctions, offering a powerful probe for uncovering hidden symmetry-breaking mechanisms in materials. The presence of higher-harmonic components in the current-phase relation, together with spin-orbital coupling, makes topological materials ideal platforms to explore this effect. In this work, we present a systematic study of the JDE in type-I topological Dirac semimetal Cd$_3$As$_2$ nanowire-based Josephson junctions. We observe a pronounced gate-tunable and highly anisotropic diode response under different magnetic-field orientations. By developing a comprehensive phenomenological model, we capture the angular dependence of the diode effect and, through temperature-dependent measurements, disentangle the respective contributions from bulk and topological surface states. Notably, anomalies in the temperature dependence of the diode efficiency reveal the coexistence of multiple transport channels, highlighting the Josephson diode effect as a sensitive probe of hidden topological superconducting states.
title Gate-tunable anisotropic Josephson diode effect in topological Dirac semimetal Cd$_3$As$_2$ nanowires
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.09676