Resolving Transient Electron-Phonon Coupling with Time-Resolved Spontaneous Raman Spectroscopy
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866911503264776192 |
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| author | Reuveni, Guy Greenberg, Maya Levy Menahem, Matan Hellman, Olle Yaffe, Omer |
| author_facet | Reuveni, Guy Greenberg, Maya Levy Menahem, Matan Hellman, Olle Yaffe, Omer |
| contents | Understanding the interaction of charge carriers with lattice vibrations in the quasi-equilibrium regime is crucial for semiconductor functionality. However, the structural signatures of these interactions are often too subtle for conventional ultrafast techniques to detect. We developed a time-resolved spontaneous Raman technique based on time-correlated single-photon counting to track the spectral response following photoexcitation, providing sub-wavenumber spectral resolution and a few-hundred-picosecond temporal resolution. Unlike traditional pump-probe schemes, our method utilizes a modulated continuous-wave probe to maintain high spectral resolution, enabling detection of low-frequency Raman shifts down to 10 cm$^{-1}$. Applied to lightly boron-doped silicon, we resolve intra-valence band and inter-valence band electronic transitions. A coupled-mode analysis of transient phonon asymmetry, resulting from interference with the inter-valence band transitions, reveals electron-phonon coupling parameters that directly relate to carrier recombination. By capturing these subtle dynamical shifts, we demonstrate that this platform offers a powerful probe for investigating electron-phonon interactions in long-lived excited states. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2603_09755 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Resolving Transient Electron-Phonon Coupling with Time-Resolved Spontaneous Raman Spectroscopy Reuveni, Guy Greenberg, Maya Levy Menahem, Matan Hellman, Olle Yaffe, Omer Materials Science Optics Understanding the interaction of charge carriers with lattice vibrations in the quasi-equilibrium regime is crucial for semiconductor functionality. However, the structural signatures of these interactions are often too subtle for conventional ultrafast techniques to detect. We developed a time-resolved spontaneous Raman technique based on time-correlated single-photon counting to track the spectral response following photoexcitation, providing sub-wavenumber spectral resolution and a few-hundred-picosecond temporal resolution. Unlike traditional pump-probe schemes, our method utilizes a modulated continuous-wave probe to maintain high spectral resolution, enabling detection of low-frequency Raman shifts down to 10 cm$^{-1}$. Applied to lightly boron-doped silicon, we resolve intra-valence band and inter-valence band electronic transitions. A coupled-mode analysis of transient phonon asymmetry, resulting from interference with the inter-valence band transitions, reveals electron-phonon coupling parameters that directly relate to carrier recombination. By capturing these subtle dynamical shifts, we demonstrate that this platform offers a powerful probe for investigating electron-phonon interactions in long-lived excited states. |
| title | Resolving Transient Electron-Phonon Coupling with Time-Resolved Spontaneous Raman Spectroscopy |
| topic | Materials Science Optics |
| url | https://arxiv.org/abs/2603.09755 |