Symmetric localization of $ν_{\text{tot}}=4/3$ fractional topological insulator edges

Fuente: arXiv
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Main Authors: Chou, Yang-Zhi, Sarma, Sankar Das
Format: Preprint
Published: 2026
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author Chou, Yang-Zhi
Sarma, Sankar Das
author_facet Chou, Yang-Zhi
Sarma, Sankar Das
contents Motivated by the recent twisted MoTe$_2$ experiment [arXiv:2601.18508], we develop a disordered interacting edge theory of a fractional topological insulator at $ν_{\text{tot}}=4/3$, consisting of two time-reversal-conjugated $ν=2/3$ fractional quantum Hall states. For an $S_z$-conserving edge, we uncover three distinct phases with two possible conductance values per edge in the long-edge limit: $\frac{2}{3}\frac{e^2}{h}$ and $\frac{4}{3}\frac{e^2}{h}$. In the presence of $S_z$-changing perturbations (e.g., Rashba spin-orbit coupling), an interaction-induced insulating edge state can emerge without breaking time-reversal or charge-conservation symmetry, corresponding to the absence of a topologically protected edge state. We further provide an exact mapping to a noninteracting fermionic theory exhibiting Anderson localization. Our results showcase an explicit, experimentally relevant example that the edge-state two-terminal transport is insufficient to identify the $ν_{\text{tot}}=4/3$ fractional topological insulators.
format Preprint
id arxiv_https___arxiv_org_abs_2603_10103
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Symmetric localization of $ν_{\text{tot}}=4/3$ fractional topological insulator edges
Chou, Yang-Zhi
Sarma, Sankar Das
Strongly Correlated Electrons
Disordered Systems and Neural Networks
Mesoscale and Nanoscale Physics
Motivated by the recent twisted MoTe$_2$ experiment [arXiv:2601.18508], we develop a disordered interacting edge theory of a fractional topological insulator at $ν_{\text{tot}}=4/3$, consisting of two time-reversal-conjugated $ν=2/3$ fractional quantum Hall states. For an $S_z$-conserving edge, we uncover three distinct phases with two possible conductance values per edge in the long-edge limit: $\frac{2}{3}\frac{e^2}{h}$ and $\frac{4}{3}\frac{e^2}{h}$. In the presence of $S_z$-changing perturbations (e.g., Rashba spin-orbit coupling), an interaction-induced insulating edge state can emerge without breaking time-reversal or charge-conservation symmetry, corresponding to the absence of a topologically protected edge state. We further provide an exact mapping to a noninteracting fermionic theory exhibiting Anderson localization. Our results showcase an explicit, experimentally relevant example that the edge-state two-terminal transport is insufficient to identify the $ν_{\text{tot}}=4/3$ fractional topological insulators.
title Symmetric localization of $ν_{\text{tot}}=4/3$ fractional topological insulator edges
topic Strongly Correlated Electrons
Disordered Systems and Neural Networks
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.10103