ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
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arXiv
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| Autori principali: | , , , , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866910048498745344 |
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| author | Jeyakumar, Ranie Venkatesan, Prasanna Fernandes, Lance Soliman, Salma Ravikumar, Priyankka Song, Taeyoung Zhang, Chengyang Hwang, Woohyun Seo, Kwangyou Lim, Suhwan Kim, Wanki Ha, Daewon Yu, Shimeng Datta, Suman Khan, Asif |
| author_facet | Jeyakumar, Ranie Venkatesan, Prasanna Fernandes, Lance Soliman, Salma Ravikumar, Priyankka Song, Taeyoung Zhang, Chengyang Hwang, Woohyun Seo, Kwangyou Lim, Suhwan Kim, Wanki Ha, Daewon Yu, Shimeng Datta, Suman Khan, Asif |
| contents | Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that the ALD oxidant used for the Al2O3 interlayer serves as a process-level tuning knob for MW engineering. H2O-grown Al2O3 yields a significantly larger MW (7-8 V) compared to O3 (4 V) for both gate-injection (12/3) and tunnel dielectric (8/3/8) configurations. While the tunnel dielectric (8/3/8) stack maintains robust retention up to 1e4s at 125C despite the larger MW, the gate-injection (12/3) configuration exhibits pronounced retention degradation for the H2O case. The enhanced MW is attributed to higher interlayer leakage associated with H2O-based ALD. These results establish oxidant choice as a key process parameter for co-optimizing MW and retention in ferroelectric NAND technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_10127 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications Jeyakumar, Ranie Venkatesan, Prasanna Fernandes, Lance Soliman, Salma Ravikumar, Priyankka Song, Taeyoung Zhang, Chengyang Hwang, Woohyun Seo, Kwangyou Lim, Suhwan Kim, Wanki Ha, Daewon Yu, Shimeng Datta, Suman Khan, Asif Materials Science Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that the ALD oxidant used for the Al2O3 interlayer serves as a process-level tuning knob for MW engineering. H2O-grown Al2O3 yields a significantly larger MW (7-8 V) compared to O3 (4 V) for both gate-injection (12/3) and tunnel dielectric (8/3/8) configurations. While the tunnel dielectric (8/3/8) stack maintains robust retention up to 1e4s at 125C despite the larger MW, the gate-injection (12/3) configuration exhibits pronounced retention degradation for the H2O case. The enhanced MW is attributed to higher interlayer leakage associated with H2O-based ALD. These results establish oxidant choice as a key process parameter for co-optimizing MW and retention in ferroelectric NAND technologies. |
| title | ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.10127 |