Transverse and Longitudinal Magnetothermopower Promoted by Ambipolar Effect in Half-Heusler Topological Materials
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2026
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| author | Pavlosiuk, Orest Matusiak, Marcin Ptok, Andrzej Wiśniewski, Piotr Kaczorowski, Dariusz |
| author_facet | Pavlosiuk, Orest Matusiak, Marcin Ptok, Andrzej Wiśniewski, Piotr Kaczorowski, Dariusz |
| contents | Topologically trivial and non-trivial semimetals with a high degree of carrier compensation are well known for demonstrating large transverse magnetothermopower ($S_{yx}$). However, in such systems, the longitudinal magnetothermopower ($S_{xx}$) is typically suppressed due to nearly perfect electron-hole compensation. Here, we show that the half-Heusler topological semimetal DyPtBi exhibits simultaneously large $S_{xx}$ and $S_{yx}$ magnetothermopowers, defying this conventional trade-off. In $B=14$\,T, thermopower of DyPtBi reaches peak values of $S_{xx}=131\,μ\rm{V/K}$ at $T=149$\,K and $S_{yx}=-297\,μ\rm{V/K}$ at $T=200$\,K, and transverse component remains significantly large even at $290$\,K ($S_{yx}=-213\,μ\rm{V/K}$). Remarkably, at $T=290$\,K and in relatively weak magnetic field of $1$\,T, both relevant for practical applications, DyPtBi shows $S_{yx}=-18\,μ\rm{V/K}$, which is one of the largest values reported under such conditions. The large transverse thermopower originates from an ambipolar effect associated with thermal excitation occurring in zero-gap semiconductors. Due to the imperfect electron-hole compensation, an intrinsic asymmetry between hole- and electron-type carriers enables pronounced values of both $S_{xx}$ and $S_{yx}$, resulting in high effective thermopower ($S_{xx}+|S_{yx}|=379\,μ\rm{V/K}$) in DyPtBi at 200\,K. A comparative analysis with DyPdBi, another half-Heusler material that demonstrates large $S_{xx}=123\,μ\rm{V/K}$ but small $S_{yx}=-16\,μ\rm{V/K}$ (both values obtained at $T=293$\,K and $B=14$\,T), highlights the critical role of band structure and compensation tuning. These findings underscore the potential of chemical doping and band engineering in rare-earth-based half-Heusler materials for optimizing both transverse and longitudinal thermoelectric properties. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2603_10499 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Transverse and Longitudinal Magnetothermopower Promoted by Ambipolar Effect in Half-Heusler Topological Materials Pavlosiuk, Orest Matusiak, Marcin Ptok, Andrzej Wiśniewski, Piotr Kaczorowski, Dariusz Materials Science Strongly Correlated Electrons Topologically trivial and non-trivial semimetals with a high degree of carrier compensation are well known for demonstrating large transverse magnetothermopower ($S_{yx}$). However, in such systems, the longitudinal magnetothermopower ($S_{xx}$) is typically suppressed due to nearly perfect electron-hole compensation. Here, we show that the half-Heusler topological semimetal DyPtBi exhibits simultaneously large $S_{xx}$ and $S_{yx}$ magnetothermopowers, defying this conventional trade-off. In $B=14$\,T, thermopower of DyPtBi reaches peak values of $S_{xx}=131\,μ\rm{V/K}$ at $T=149$\,K and $S_{yx}=-297\,μ\rm{V/K}$ at $T=200$\,K, and transverse component remains significantly large even at $290$\,K ($S_{yx}=-213\,μ\rm{V/K}$). Remarkably, at $T=290$\,K and in relatively weak magnetic field of $1$\,T, both relevant for practical applications, DyPtBi shows $S_{yx}=-18\,μ\rm{V/K}$, which is one of the largest values reported under such conditions. The large transverse thermopower originates from an ambipolar effect associated with thermal excitation occurring in zero-gap semiconductors. Due to the imperfect electron-hole compensation, an intrinsic asymmetry between hole- and electron-type carriers enables pronounced values of both $S_{xx}$ and $S_{yx}$, resulting in high effective thermopower ($S_{xx}+|S_{yx}|=379\,μ\rm{V/K}$) in DyPtBi at 200\,K. A comparative analysis with DyPdBi, another half-Heusler material that demonstrates large $S_{xx}=123\,μ\rm{V/K}$ but small $S_{yx}=-16\,μ\rm{V/K}$ (both values obtained at $T=293$\,K and $B=14$\,T), highlights the critical role of band structure and compensation tuning. These findings underscore the potential of chemical doping and band engineering in rare-earth-based half-Heusler materials for optimizing both transverse and longitudinal thermoelectric properties. |
| title | Transverse and Longitudinal Magnetothermopower Promoted by Ambipolar Effect in Half-Heusler Topological Materials |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2603.10499 |