Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers
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| Format: | Preprint |
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2026
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| author | Peng, Rui Su, Guangxu Fan, Yangyang Li, Jiaan Liu, Fanxin Ang, Yee Sin |
| author_facet | Peng, Rui Su, Guangxu Fan, Yangyang Li, Jiaan Liu, Fanxin Ang, Yee Sin |
| contents | The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and layer degrees of freedom in an altermagnetic bilayer via sliding ferroelectricity. Using first-principles calculations, we show that an interlayer translation can induce a switchable out-of-plane ferroelectric polarization in bilayer CuF2, which directly couples to and reverses the d-wave altermagnetic spin splitting. Notably, the altermangetic spin splitting is layer-locked, the sliding ferroelectricity-driven switching thus embodying a nonvolatile spin-layertronics functionality that couples spin-polarized transport and layer degree of freedom in a single platform. We show that in quadrilayer CuF2, four polarization states are identified which may offer multi-state logic device applications. These findings establish sliding ferroelectricity as a versatile tool for designing voltage-controlled, high-speed and energy-efficient spin-layertronic devices based on altermagnets. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_10907 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers Peng, Rui Su, Guangxu Fan, Yangyang Li, Jiaan Liu, Fanxin Ang, Yee Sin Materials Science Computational Physics The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and layer degrees of freedom in an altermagnetic bilayer via sliding ferroelectricity. Using first-principles calculations, we show that an interlayer translation can induce a switchable out-of-plane ferroelectric polarization in bilayer CuF2, which directly couples to and reverses the d-wave altermagnetic spin splitting. Notably, the altermangetic spin splitting is layer-locked, the sliding ferroelectricity-driven switching thus embodying a nonvolatile spin-layertronics functionality that couples spin-polarized transport and layer degree of freedom in a single platform. We show that in quadrilayer CuF2, four polarization states are identified which may offer multi-state logic device applications. These findings establish sliding ferroelectricity as a versatile tool for designing voltage-controlled, high-speed and energy-efficient spin-layertronic devices based on altermagnets. |
| title | Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2603.10907 |