Non-volatile Multistate Magnetic Switching via Spin-orbit Torque and Intrinsic Anisotropy

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Hauptverfasser: Ye, Fei, Wang, Chunzheng, Zhang, Xue, Jiao, Sihai, Wang, Zhongjie, Cheng, Long, Zhu, Zhifeng, Gao, Chunlei, Zhai, Xiaofang
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Veröffentlicht: 2026
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author Ye, Fei
Wang, Chunzheng
Zhang, Xue
Jiao, Sihai
Wang, Zhongjie
Cheng, Long
Zhu, Zhifeng
Gao, Chunlei
Zhai, Xiaofang
author_facet Ye, Fei
Wang, Chunzheng
Zhang, Xue
Jiao, Sihai
Wang, Zhongjie
Cheng, Long
Zhu, Zhifeng
Gao, Chunlei
Zhai, Xiaofang
contents While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new multistate SOT device in a SrIrO_3/SrRuO_3 bilayer, hosting four intrinsically stable yet electrically distinguishable magnetic states, including two in-plane canted (IP_c^$\pm$) and two out-of-plane canted (OP_c^$\pm$) states. Pulsed current excitations fully map all twelve deterministic transitions among the four states, establishing a robust switching protocol defined by two characteristic current densities. In-situ scanning nitrogen-vacancy (NV) center magnetometry provides direct real-space evidence for the previously unobserved IP_c^$\pm$ states, and spin dynamics simulations uncover a two-step switching pathway, driven by the concerted action of spin torques and the effective anisotropy field within the fourfold anisotropy landscape. Our demonstration of the intrinsic multistate SOT device directly addresses the density bottleneck of conventional bistate SOT technology, establishing a powerful paradigm for compact, high-speed, and energy-efficient multistate spintronics.
format Preprint
id arxiv_https___arxiv_org_abs_2603_11656
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Non-volatile Multistate Magnetic Switching via Spin-orbit Torque and Intrinsic Anisotropy
Ye, Fei
Wang, Chunzheng
Zhang, Xue
Jiao, Sihai
Wang, Zhongjie
Cheng, Long
Zhu, Zhifeng
Gao, Chunlei
Zhai, Xiaofang
Mesoscale and Nanoscale Physics
Applied Physics
While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new multistate SOT device in a SrIrO_3/SrRuO_3 bilayer, hosting four intrinsically stable yet electrically distinguishable magnetic states, including two in-plane canted (IP_c^$\pm$) and two out-of-plane canted (OP_c^$\pm$) states. Pulsed current excitations fully map all twelve deterministic transitions among the four states, establishing a robust switching protocol defined by two characteristic current densities. In-situ scanning nitrogen-vacancy (NV) center magnetometry provides direct real-space evidence for the previously unobserved IP_c^$\pm$ states, and spin dynamics simulations uncover a two-step switching pathway, driven by the concerted action of spin torques and the effective anisotropy field within the fourfold anisotropy landscape. Our demonstration of the intrinsic multistate SOT device directly addresses the density bottleneck of conventional bistate SOT technology, establishing a powerful paradigm for compact, high-speed, and energy-efficient multistate spintronics.
title Non-volatile Multistate Magnetic Switching via Spin-orbit Torque and Intrinsic Anisotropy
topic Mesoscale and Nanoscale Physics
Applied Physics
url https://arxiv.org/abs/2603.11656