940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866917335324950528 |
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| author | Saddik, Karim Ben Arnoult, Alexandre Gadras, Pierre Calvez, Stéphane Bourdon, Léo Monflier, Richard Strupinski, Wlodek Almuneau, Guilhem |
| author_facet | Saddik, Karim Ben Arnoult, Alexandre Gadras, Pierre Calvez, Stéphane Bourdon, Léo Monflier, Richard Strupinski, Wlodek Almuneau, Guilhem |
| contents | Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth was realized upon a virtual substrate composed of GaAs on Ge grown by melatorganic vapour phase epitaxy (MOVPE). In situ monitoring during MBE growth employed multispectral reflectometry and magnification-inferred curvature imaging for real-time growth analysis. Curvature measurements revealed progressive compressive stress, while optical reflectivity data confirmed uniform layer growth and accurate stopband formation. Fabricated devices with mesa diameters of 35-40 $μ$m, corresponding to oxide apertures of approximately 11-16 $μ$m, exhibited room-temperature lasing under continuous-wave bias with threshold currents below 3 mA. To the best of our knowledge, this is the first demonstration of monolithically integrated 940 nm VCSELs grown on Ge substrates by MBE. These results confirm the viability of MBE-grown VCSELs on Ge with in situ process control for scalable optoelectronic integration. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_11902 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | 940-nm VCSELs grown by molecular beam epitaxy on Ge(001) Saddik, Karim Ben Arnoult, Alexandre Gadras, Pierre Calvez, Stéphane Bourdon, Léo Monflier, Richard Strupinski, Wlodek Almuneau, Guilhem Materials Science Optics Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth was realized upon a virtual substrate composed of GaAs on Ge grown by melatorganic vapour phase epitaxy (MOVPE). In situ monitoring during MBE growth employed multispectral reflectometry and magnification-inferred curvature imaging for real-time growth analysis. Curvature measurements revealed progressive compressive stress, while optical reflectivity data confirmed uniform layer growth and accurate stopband formation. Fabricated devices with mesa diameters of 35-40 $μ$m, corresponding to oxide apertures of approximately 11-16 $μ$m, exhibited room-temperature lasing under continuous-wave bias with threshold currents below 3 mA. To the best of our knowledge, this is the first demonstration of monolithically integrated 940 nm VCSELs grown on Ge substrates by MBE. These results confirm the viability of MBE-grown VCSELs on Ge with in situ process control for scalable optoelectronic integration. |
| title | 940-nm VCSELs grown by molecular beam epitaxy on Ge(001) |
| topic | Materials Science Optics |
| url | https://arxiv.org/abs/2603.11902 |