First-principles modeling of electrostatics and transport in 2D topological transistors
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866912984145592320 |
|---|---|
| author | Choi, Hyeonseok Park, Yosep Lim, Subeen Lee, Yeonghun |
| author_facet | Choi, Hyeonseok Park, Yosep Lim, Subeen Lee, Yeonghun |
| contents | We develop a simulation framework for electrostatic and transport modeling of 2D Topological insulator field-effect transistor (2D TIFETs), based solely on first-principles calculations using density functional theory (DFT). We find that careful consideration of basis set and symmetry constraints in DFT calculations is crucial for determining critical electric field ($E_c$), defined as the electric field intensity at which the topological phase transition occurs. Using ballistic Landauer-B$ü$ttiker formula and local potential profile, the drain current-gate bias voltage ($I_D$-$V_G$) characteristics were obtained and switching behavior was studied. A comparison with the $\mathbf{k}\cdot\mathbf{p}$ model reveals the necessity of DFT calculations for investigating realistic edge dispersions. Our approach provides an efficient and rigorous simulation methodology for mesoscopic transport in 2D TIFETs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_13714 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | First-principles modeling of electrostatics and transport in 2D topological transistors Choi, Hyeonseok Park, Yosep Lim, Subeen Lee, Yeonghun Mesoscale and Nanoscale Physics We develop a simulation framework for electrostatic and transport modeling of 2D Topological insulator field-effect transistor (2D TIFETs), based solely on first-principles calculations using density functional theory (DFT). We find that careful consideration of basis set and symmetry constraints in DFT calculations is crucial for determining critical electric field ($E_c$), defined as the electric field intensity at which the topological phase transition occurs. Using ballistic Landauer-B$ü$ttiker formula and local potential profile, the drain current-gate bias voltage ($I_D$-$V_G$) characteristics were obtained and switching behavior was studied. A comparison with the $\mathbf{k}\cdot\mathbf{p}$ model reveals the necessity of DFT calculations for investigating realistic edge dispersions. Our approach provides an efficient and rigorous simulation methodology for mesoscopic transport in 2D TIFETs. |
| title | First-principles modeling of electrostatics and transport in 2D topological transistors |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.13714 |