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Main Authors: Wu, Taiqiang, Cheng, Yuxin, Ding, Chenchen, Yang, Runming, Feng, Xincheng, Zhou, Wenyong, Liu, Zhengwu, Wong, Ngai
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2603.13725
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_version_ 1866914392993431552
author Wu, Taiqiang
Cheng, Yuxin
Ding, Chenchen
Yang, Runming
Feng, Xincheng
Zhou, Wenyong
Liu, Zhengwu
Wong, Ngai
author_facet Wu, Taiqiang
Cheng, Yuxin
Ding, Chenchen
Yang, Runming
Feng, Xincheng
Zhou, Wenyong
Liu, Zhengwu
Wong, Ngai
contents Memristor-based analog compute-in-memory (CIM) architectures provide a promising substrate for the efficient deployment of Large Language Models (LLMs), owing to superior energy efficiency and computational density. However, these architectures suffer from precision issues caused by intrinsic non-idealities of memristors. In this paper, we first conduct a comprehensive investigation into the impact of such typical non-idealities on LLM reasoning. Empirical results indicate that reasoning capability decreases significantly but varies for distinct benchmarks. Subsequently, we systematically appraise three training-free strategies, including thinking mode, in-context learning, and module redundancy. We thus summarize valuable guidelines, i.e., shallow layer redundancy is particularly effective for improving robustness, thinking mode performs better under low noise levels but degrades at higher noise, and in-context learning reduces output length with a slight performance trade-off. Our findings offer new insights into LLM reasoning under non-ideality and practical strategies to improve robustness.
format Preprint
id arxiv_https___arxiv_org_abs_2603_13725
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Can We Trust LLMs on Memristors? Diving into Reasoning Ability under Non-Ideality
Wu, Taiqiang
Cheng, Yuxin
Ding, Chenchen
Yang, Runming
Feng, Xincheng
Zhou, Wenyong
Liu, Zhengwu
Wong, Ngai
Computation and Language
Memristor-based analog compute-in-memory (CIM) architectures provide a promising substrate for the efficient deployment of Large Language Models (LLMs), owing to superior energy efficiency and computational density. However, these architectures suffer from precision issues caused by intrinsic non-idealities of memristors. In this paper, we first conduct a comprehensive investigation into the impact of such typical non-idealities on LLM reasoning. Empirical results indicate that reasoning capability decreases significantly but varies for distinct benchmarks. Subsequently, we systematically appraise three training-free strategies, including thinking mode, in-context learning, and module redundancy. We thus summarize valuable guidelines, i.e., shallow layer redundancy is particularly effective for improving robustness, thinking mode performs better under low noise levels but degrades at higher noise, and in-context learning reduces output length with a slight performance trade-off. Our findings offer new insights into LLM reasoning under non-ideality and practical strategies to improve robustness.
title Can We Trust LLMs on Memristors? Diving into Reasoning Ability under Non-Ideality
topic Computation and Language
url https://arxiv.org/abs/2603.13725